AAAAAA
Results:
1-8
|
Results: 8
Authors:
Magno, R
Bracker, AS
Bennett, BR
Nosho, BZ
Whitman, LJ
Citation: R. Magno et al., Barrier roughness effects in resonant interband tunnel diodes, J APPL PHYS, 90(12), 2001, pp. 6177-6181
Authors:
Magno, R
Bracker, AS
Bennett, BR
Citation: R. Magno et al., Resonant interband tunnel diodes with AlGaSb barriers, J APPL PHYS, 89(10), 2001, pp. 5791-5793
Authors:
Hanbicki, AT
Magno, R
Cheng, SF
Park, YD
Bracker, AS
Jonker, BT
Citation: At. Hanbicki et al., Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode-giant magnetoresistance circuits, APPL PHYS L, 79(8), 2001, pp. 1190-1192
Authors:
Magno, R
Weaver, BD
Bracker, AS
Bennett, BR
Citation: R. Magno et al., Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes, APPL PHYS L, 78(17), 2001, pp. 2581-2583
Authors:
Bennett, BR
Bracker, AS
Magno, R
Boos, JB
Bass, R
Park, D
Citation: Br. Bennett et al., Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system, J VAC SCI B, 18(3), 2000, pp. 1650-1652
Authors:
Magno, R
Bennett, BR
Glaser, ER
Citation: R. Magno et al., Deep level transient capacitance measurements of GaSb self-assembled quantum dots, J APPL PHYS, 88(10), 2000, pp. 5843-5849
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bracker, AS
Magno, R
Bennett, BR
Culbertson, JC
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
Authors:
Rendell, RW
Buot, FA
Snow, ES
Campbell, PM
Park, D
Marrian, CRK
Magno, R
Citation: Rw. Rendell et al., Operation and design of metal-oxide tunnel transistors, J APPL PHYS, 84(9), 1998, pp. 5021-5031
Risultati:
1-8
|