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Results:
1-11
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Results: 11
Authors:
Mah, KW
McGlynn, E
Mosnier, JP
Henry, MO
Castro, J
O'Mahony, D
Lunney, JG
Citation: Kw. Mah et al., Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere, MAT SCI E B, 82(1-3), 2001, pp. 128-130
Authors:
Mah, KW
McGlynn, E
Castro, J
Lunney, JG
Mosnier, JP
O'Mahony, D
Henry, MO
Citation: Kw. Mah et al., Defect luminescence of GaN grown by pulsed laser deposition, J CRYST GR, 222(3), 2001, pp. 497-502
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., V/III ratio and silicon doping effects on the properties of In1-xGaxP/GaAsgrown by solid source molecular beam epitaxy, OPT MATER, 14(1), 2000, pp. 59-68
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 110-114
Authors:
Mah, KW
Castro, J
Costello, JT
Kennedy, ET
Lunney, JG
McGlynn, E
van Kampen, P
Mosnier, JP
Citation: Kw. Mah et al., Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy, APPL SURF S, 168(1-4), 2000, pp. 150-153
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Gay, BP
Zhang, PH
Citation: Sf. Yoon et al., Observation of weak ordering effects and surface morphology study of InGaPgrown by solid source molecular beam epitaxy, MICROELEC J, 31(1), 2000, pp. 15-21
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures, J CRYST GR, 216(1-4), 2000, pp. 51-56
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Zhang, PH
Citation: Sf. Yoon et al., Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates, J CRYST GR, 208(1-4), 2000, pp. 197-204
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., Effects of V/III ratio on the properties of In1-xGaxP/GaAs grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy, JPN J A P 1, 38(10), 1999, pp. 5740-5744
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell, EPJ-APPL PH, 7(2), 1999, pp. 111-117
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy, J APPL PHYS, 85(10), 1999, pp. 7374-7379
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