Authors: Wang, XD Mahaffy, R Tan, K Shih, CK Lee, JJ Foisy, M

Citation: Xd. Wang et al., Two-dimensional dopant profile of 0.2 mu m metal-oxide-semiconductor fieldeffect transistors, J VAC SCI B, 18(1), 2000, pp. 560-565

Authors: Mahaffy, R Shih, CK Edwards, H

Citation: R. Mahaffy et al., Comparative study of two-dimensional junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method, J VAC SCI B, 18(1), 2000, pp. 566-571

Authors: McDonald, A Mahaffy, R Wang, XD Kuklewicz, C Shih, CK Dennis, M Tiffin, D Kadoch, D Duane, M

Citation: A. Mcdonald et al., Quantitative two-dimensional profiling of 0.35 mu m transistors with lightly doped drain structures, J VAC SCI B, 18(1), 2000, pp. 572-575

Authors: Sun, YM Endle, JP Smith, K Whaley, S Mahaffy, R Ekerdt, JG White, JM Hance, RL

Citation: Ym. Sun et al., Iridium film growth with iridium tris-acetylacetonate: oxygen and substrate effects, THIN SOL FI, 346(1-2), 1999, pp. 100-107