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Results: 1-9 |
Results: 9
Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201
Authors: Marbach, K Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Meier, P Peters, D Thiess, H Ackermann, H Stockmann, HJ Zeitz, WD Wenisch, H Hommel, D Landwehr, G
Citation: K. Marbach et al., Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201, PHYS REV B, 6324(24), 2001, pp. 1201
Local structure of implanted B in amorphous Si
Authors: Mai, F Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Marbach, K Meier, P Mell, H Peters, D Thiess, H Ackermann, H Stockmann, HJ
Citation: F. Mai et al., Local structure of implanted B in amorphous Si, APPL PHYS L, 79(3), 2001, pp. 338-340
Diabetes knowledge - Are patients getting the message?
Authors: Ford, S Mai, F Manson, A Rukin, N Dunne, F
Citation: S. Ford et al., Diabetes knowledge - Are patients getting the message?, INT J CL PR, 54(8), 2000, pp. 535-536
Psychiatry, 2nd edition.
Authors: Mai, F
Citation: F. Mai, Psychiatry, 2nd edition., J PSYCH NEU, 25(5), 2000, pp. 513-513
Treatment compliance and the therapeutic alliance.
Authors: Mai, F
Citation: F. Mai, Treatment compliance and the therapeutic alliance., J PSYCH NEU, 25(2), 2000, pp. 196-197
beta-NMR in II-VI semiconductors
Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Welker, G Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M
Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441
beta-NMR in II-VI semiconductors
Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Welker, G Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M
Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441
Implanted light dopants in ZnSe
Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Thiess, H Welker, G Ackermann, H Stockmann, HJ Zeitz, WD Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M
Citation: B. Ittermann et al., Implanted light dopants in ZnSe, HYPER INTER, 121(1-8), 1999, pp. 403-407
Defect properties of implanted boron in ZnSe
Authors: Ittermann, B Welker, G Kroll, F Mai, F Marbach, K Peters, D
Citation: B. Ittermann et al., Defect properties of implanted boron in ZnSe, PHYS REV B, 59(4), 1999, pp. 2700-2712
Risultati: 1-9 |