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Results: 1-19 |
Results: 19
New phase formation of Gd2O3 films on GaAs(100)
Authors: Kortan, AR Hong, M Kwo, J Mannaerts, JP Krajewski, JJ Kopylov, N Steiner, C Bolliger, B Erbudak, M
Citation: Ar. Kortan et al., New phase formation of Gd2O3 films on GaAs(100), J VAC SCI B, 19(4), 2001, pp. 1434-1438
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
Authors: Lay, TS Hong, M Kwo, J Mannaerts, JP Hung, WH Huang, DJ
Citation: Ts. Lay et al., Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces, SOL ST ELEC, 45(9), 2001, pp. 1679-1682
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
Authors: Lay, TS Huang, KH Hung, WH Hong, M Kwo, J Mannaerts, JP
Citation: Ts. Lay et al., Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy, SOL ST ELEC, 45(3), 2001, pp. 423-426
Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si
Authors: Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation: J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
Authors: Lay, TS Liu, WD Hong, M Kwo, J Mannaerts, JP
Citation: Ts. Lay et al., C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density, ELECTR LETT, 37(9), 2001, pp. 595-597
Interface reactions of high-kappa Y2O3 gate oxides with Si
Authors: Busch, BW Kwo, J Hong, M Mannaerts, JP Sapjeta, BJ Schulte, WH Garfunkel, E Gustafsson, T
Citation: Bw. Busch et al., Interface reactions of high-kappa Y2O3 gate oxides with Si, APPL PHYS L, 79(15), 2001, pp. 2447-2449
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Authors: Hong, M Anselm, KA Kwo, J Ng, HM Baillargeon, JN Kortan, AR Mannaerts, JP Cho, AY Lee, CM Chyi, JI Lay, TS
Citation: M. Hong et al., Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes, J VAC SCI B, 18(3), 2000, pp. 1453-1456
Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions
Authors: Hong, M Kortan, AR Kwo, J Mannaerts, JP Krajewski, JJ Lu, ZH Hsieh, KC Cheng, KY
Citation: M. Hong et al., Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions, J VAC SCI B, 18(3), 2000, pp. 1688-1691
Structural modifications of the Gd2O3(110) films on GaAs(100)
Authors: Steiner, C Bolliger, B Erbudak, M Hong, M Kortan, AR Kwo, J Mannaerts, JP
Citation: C. Steiner et al., Structural modifications of the Gd2O3(110) films on GaAs(100), PHYS REV B, 62(16), 2000, pp. R10614-R10617
Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates
Authors: Bolliger, B Erbudak, M Hong, M Kwo, J Kortan, AR Mannaerts, JP
Citation: B. Bolliger et al., Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates, SURF INT AN, 30(1), 2000, pp. 514-517
High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon
Authors: Kwo, J Hong, M Kortan, AR Queeney, KT Chabal, YJ Mannaerts, JP Boone, T Krajewski, JJ Sergent, AM Rosamilia, JM
Citation: J. Kwo et al., High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon, APPL PHYS L, 77(1), 2000, pp. 130-132
Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states
Authors: Hong, M Lu, ZH Kwo, J Kortan, AR Mannaerts, JP Krajewski, JJ Hsieh, KC Chou, LJ Cheng, KY
Citation: M. Hong et al., Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states, APPL PHYS L, 76(3), 2000, pp. 312-314
Extended x-ray absorption fine-structure measurement of bond-length strainin epitaxial Gd2O3 on GaAs(001)
Authors: Nelson, EJ Woicik, JC Hong, M Kwo, J Mannaerts, JP
Citation: Ej. Nelson et al., Extended x-ray absorption fine-structure measurement of bond-length strainin epitaxial Gd2O3 on GaAs(001), APPL PHYS L, 76(18), 2000, pp. 2526-2528
Passivation of GaAs using gallium-gadolinium oxides
Authors: Kwo, J Murphy, DW Hong, M Mannaerts, JP Opila, RL Masaitis, RL Sergent, AM
Citation: J. Kwo et al., Passivation of GaAs using gallium-gadolinium oxides, J VAC SCI B, 17(3), 1999, pp. 1294-1296
Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis
Authors: Wang, YC Hong, M Kuo, JM Mannaerts, JP Kwo, J Tsai, HS Krajewski, JJ Chen, YK Cho, AY
Citation: Yc. Wang et al., Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis, IEEE ELEC D, 20(9), 1999, pp. 457-459
Structure of epitaxial Gd2O3 films grown on GaAs(100)
Authors: Kortan, AR Hong, M Kwo, J Mannaerts, JP Kopylov, N
Citation: Ar. Kortan et al., Structure of epitaxial Gd2O3 films grown on GaAs(100), PHYS REV B, 60(15), 1999, pp. 10913-10918
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
Authors: Hong, M Kwo, J Kortan, AR Mannaerts, JP Sergent, AM
Citation: M. Hong et al., Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation, SCIENCE, 283(5409), 1999, pp. 1897-1900
Ga2O3(Gd2O3)/GaAs power MOSFETs
Authors: Wang, YC Hong, M Kuo, JM Mannaerts, JP Tsai, HS Kwo, J Krajewski, JJ Chen, YK Cho, AY
Citation: Yc. Wang et al., Ga2O3(Gd2O3)/GaAs power MOSFETs, ELECTR LETT, 35(8), 1999, pp. 667-669
Passivation of GaAs using (Ga2O3)(1-x)(Gd2O3)(x), 0 <= x <= 1.0 films
Authors: Kwo, J Murphy, DW Hong, M Opila, RL Mannaerts, JP Sergent, AM Masaitis, RL
Citation: J. Kwo et al., Passivation of GaAs using (Ga2O3)(1-x)(Gd2O3)(x), 0 <= x <= 1.0 films, APPL PHYS L, 75(8), 1999, pp. 1116-1118
Risultati: 1-19 |