Authors: Marbach, K Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Meier, P Peters, D Thiess, H Ackermann, H Stockmann, HJ Zeitz, WD Wenisch, H Hommel, D Landwehr, G

Citation: K. Marbach et al., Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201, PHYS REV B, 6324(24), 2001, pp. 1201

Authors: Mai, F Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Marbach, K Meier, P Mell, H Peters, D Thiess, H Ackermann, H Stockmann, HJ

Citation: F. Mai et al., Local structure of implanted B in amorphous Si, APPL PHYS L, 79(3), 2001, pp. 338-340

Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Welker, G Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M

Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441

Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Welker, G Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M

Citation: B. Ittermann et al., beta-NMR in II-VI semiconductors, HYPER INTER, 129(1-4), 2000, pp. 423-441

Authors: Ittermann, B Fullgrabe, M Heemeier, M Kroll, F Mai, F Marbach, K Meier, P Peters, D Thiess, H Welker, G Ackermann, H Stockmann, HJ Zeitz, WD Geithner, W Kappertz, S Wilbert, S Neugart, R Lievens, P Georg, U Keim, M

Citation: B. Ittermann et al., Implanted light dopants in ZnSe, HYPER INTER, 121(1-8), 1999, pp. 403-407

Authors: Ittermann, B Welker, G Kroll, F Mai, F Marbach, K Peters, D

Citation: B. Ittermann et al., Defect properties of implanted boron in ZnSe, PHYS REV B, 59(4), 1999, pp. 2700-2712