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Results:
1-16
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Results: 16
Authors:
Markwitz, A
Baumann, H
Krimmel, EF
Citation: A. Markwitz et al., Height control of silicon nano-whiskers embedded in ultra thin silicon nitride layers by rapid thermal annealing, PHYSICA E, 11(2-3), 2001, pp. 110-113
Authors:
Johnson, PB
Markwitz, A
Gilberd, PW
Citation: Pb. Johnson et al., Shallow nanoporous surface layers produced by helium ion implantation, ADVAN MATER, 13(12-13), 2001, pp. 997
Authors:
Markwitz, A
White, GV
Citation: A. Markwitz et Gv. White, Nitridation of silicon oxide layers studied with ion beam analysis on the nanometer scale, ADVAN MATER, 13(12-13), 2001, pp. 1027
Oxygen and hydrogen profiles in metal surfaces following plasma immersion ion implantation of helium
Authors:
Johnson, PB
Gilberd, PW
Markwitz, A
Trompetter, WJ
Collins, GA
Short, KT
Cohen, DD
Dytlewski, N
Citation: Pb. Johnson et al., Oxygen and hydrogen profiles in metal surfaces following plasma immersion ion implantation of helium, SURF COAT, 136(1-3), 2001, pp. 217-222
Authors:
Markwitz, A
Trompetter, WJ
White, GV
Brown, IWM
Citation: A. Markwitz et al., Ion microscope investigations of non-uniform surfaces of thin SiO2 films produced by high-temperature nitridation experiments, NUCL INST B, 181, 2001, pp. 354-359
Authors:
Markwitz, A
White, GV
Trompetter, WJ
Brown, IWM
Citation: A. Markwitz et al., Influence of the native oxide layer on the silicon surface during initial stages of nitridation, MIKROCH ACT, 137(1-2), 2001, pp. 49-56
Authors:
Bittar, A
Trodahl, HJ
Kemp, NT
Markwitz, A
Citation: A. Bittar et al., Ion-assisted deposition of amorphous GaN: Raman and optical properties, APPL PHYS L, 78(5), 2001, pp. 619-621
Authors:
Markwitz, A
Grambole, D
Herrmann, F
Trompetter, WJ
Dioses, T
Gauldie, RW
Citation: A. Markwitz et al., Reliable micro-measurement of strontium is the key to cracking the life-history code in the fish otolith, NUCL INST B, 168(1), 2000, pp. 109-116
Authors:
Johnson, PB
Gilberd, PW
Markwitz, A
Raudsepp, A
Brown, IWM
Citation: Pb. Johnson et al., Helium ion implantation in SiAlON: Characterisation of cavity structures using TEM and IBA, NUCL INST B, 166, 2000, pp. 121-127
Authors:
Markwitz, A
Citation: A. Markwitz, Depth profiling: RBS versus energy-dispersive X-ray imaging using scanningtransmission electron microscopy, NUCL INST B, 161, 2000, pp. 221-226
Authors:
Markwitz, A
Johnson, PB
Gilberd, PW
Collins, GA
Cohen, DD
Dytlewski, N
Citation: A. Markwitz et al., Ion beam analysis of nanoporous surfaces produced by He-implantation and oxidised by plasma-immersion ion-implantation, NUCL INST B, 161, 2000, pp. 1048-1053
Authors:
Coote, GE
Gauldie, RW
Trompetter, WJ
Vickridge, IC
Markwitz, A
Citation: Ge. Coote et al., Twenty years of proton microprobe research in biominerals: A tribute to Graeme Ernest Coote, 1935-1997, NUCL INST B, 158(1-4), 1999, pp. 1-5
Authors:
Trompetter, WJ
Reyes, AG
Vickridge, IC
Markwitz, A
Citation: Wj. Trompetter et al., Lithium and boron distributions in geological samples, NUCL INST B, 158(1-4), 1999, pp. 568-574
Authors:
Markwitz, A
Grotzschel, R
Heinig, KH
Rebohle, L
Skorupa, W
Citation: A. Markwitz et al., Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM, NUCL INST B, 152(2-3), 1999, pp. 319-324
Authors:
Heinig, KH
Schmidt, B
Markwitz, A
Grotzschel, R
Strobel, M
Oswald, S
Citation: Kh. Heinig et al., Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers, NUCL INST B, 148(1-4), 1999, pp. 969-974
Authors:
von Borany, J
Grotzschel, R
Heinig, KH
Markwitz, A
Schmidt, B
Skorupa, W
Thees, HJ
Citation: J. Von Borany et al., The formation of narrow nanocluster bands in Ge-implanted SiO2-layers, SOL ST ELEC, 43(6), 1999, pp. 1159-1163
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