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Results: 1-25/27
Authors:
Ramalingam, S
Aydil, ES
Maroudas, D
Citation: S. Ramalingam et al., Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces, J VAC SCI B, 19(3), 2001, pp. 634-644
Authors:
Gungor, MR
Maroudas, D
Citation: Mr. Gungor et D. Maroudas, Modeling of electromechanically-induced failure of passivated metallic thin films used in device interconnections, INT J FRACT, 109(1), 2001, pp. 47-68
Authors:
Zepeda-Ruiz, LA
Pelzel, RI
Nosho, BZ
Weinberg, WH
Maroudas, D
Citation: La. Zepeda-ruiz et al., Deformation behavior of coherently strained InAs/GaAs(111) A heteroepitaxial systems: Theoretical calculations and experimental measurements, J APPL PHYS, 90(6), 2001, pp. 2689-2698
Authors:
Walch, SP
Ramalingam, S
Sriraman, S
Aydil, ES
Maroudas, D
Citation: Sp. Walch et al., Mechanisms and energetics of SiH3 adsorption on the pristine Si(001)-(2 x 1) surface, CHEM P LETT, 344(3-4), 2001, pp. 249-255
Authors:
Ramalingam, S
Sriraman, S
Aydil, ES
Maroudas, D
Citation: S. Ramalingam et al., Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation, APPL PHYS L, 78(18), 2001, pp. 2685-2687
Authors:
Zhao, JH
Maroudas, D
Milstein, F
Citation: Jh. Zhao et al., Thermal activation of shear modulus instabilities in pressure-induced bcc -> hcp transitions, PHYS REV B, 62(21), 2000, pp. 13799-13802
Authors:
Pelzel, RI
Zepeda-Ruiz, LA
Weinberg, WH
Maroudas, D
Citation: Ri. Pelzel et al., Effects of buffer layer thickness and film compositional grading on strainrelaxation kinetics in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 463(2), 2000, pp. L634-L640
Authors:
Gungor, MR
Maroudas, D
Citation: Mr. Gungor et D. Maroudas, Current-induced non-linear dynamics of voids in metallic thin films: morphological transition and surface wave propagation, SURF SCI, 461(1-3), 2000, pp. L550-L556
Authors:
Sriraman, S
Ramalingam, S
Aydil, ES
Maroudas, D
Citation: S. Sriraman et al., Abstraction of hydrogen by SiH radicals from hydrogenated amorphous silicon surfaces, SURF SCI, 459(3), 2000, pp. L475-L481
Authors:
Wirth, BD
Odette, GR
Maroudas, D
Lucas, GE
Citation: Bd. Wirth et al., Dislocation loop structure, energy and mobility of self-interstitial atom clusters in bcc iron, J NUCL MAT, 276, 2000, pp. 33-40
Authors:
Walch, SP
Ramalingam, S
Aydil, ES
Maroudas, D
Citation: Sp. Walch et al., Mechanism and energetics of dissociative adsorption of SiH3 on the hydrogen-terminated Si(001)-(2 x 1) surface, CHEM P LETT, 329(3-4), 2000, pp. 304-310
Molecular-dynamics study of the mechanism and kinetics of void growth in ductile metallic thin films
Authors:
Gungor, MR
Maroudas, D
Zhou, SJ
Citation: Mr. Gungor et al., Molecular-dynamics study of the mechanism and kinetics of void growth in ductile metallic thin films, APPL PHYS L, 77(3), 2000, pp. 343-345
Authors:
Zepeda-Ruiz, LA
Pelzel, RI
Weinberg, WH
Maroudas, D
Citation: La. Zepeda-ruiz et al., Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading, APPL PHYS L, 77(21), 2000, pp. 3352-3354
Authors:
Pelzel, RI
Zepeda-Ruiz, LA
Nosho, BZ
Li, YL
Weinberg, WH
Maroudas, D
Citation: Ri. Pelzel et al., Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy, APPL PHYS L, 76(21), 2000, pp. 3017-3019
Authors:
Maroudas, D
Citation: D. Maroudas, Multiscale modeling of hard materials: Challenges and opportunities for chemical engineering, AICHE J, 46(5), 2000, pp. 878-882
Authors:
Gray, LJ
Maroudas, D
Enmark, MN
D'azevedo, EF
Citation: Lj. Gray et al., Approximate Green's functions in boundary integral analysis, ENG ANAL, 23(3), 1999, pp. 267-274
Authors:
Ramalingam, S
Maroudas, D
Aydil, ES
Citation: S. Ramalingam et al., Visualizing radical-surface interactions in plasma deposition processes: Reactivity of SiH3 radicals with Si surfaces, IEEE PLAS S, 27(1), 1999, pp. 104-105
Authors:
Zepeda-Ruiz, LA
Nosho, BZ
Pelzel, RI
Weinberg, WH
Maroudas, D
Citation: La. Zepeda-ruiz et al., Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 441(2-3), 1999, pp. L911-L916
Authors:
Gungor, MR
Maroudas, D
Citation: Mr. Gungor et D. Maroudas, Nonhydrostatic stress effects on failure of passivated metallic thin filmsdue to void surface electromigration, SURF SCI, 432(3), 1999, pp. L604-L610
Authors:
Ramalingam, S
Maroudas, D
Aydil, ES
Citation: S. Ramalingam et al., Atomistic simulation study of the interactions of SiH3 radicals with silicon surfaces, J APPL PHYS, 86(5), 1999, pp. 2872-2888
Authors:
Ramalingam, S
Mahalingam, P
Aydil, ES
Maroudas, D
Citation: S. Ramalingam et al., Theoretical study of the interactions of SiH2 radicals with silicon surfaces, J APPL PHYS, 86(10), 1999, pp. 5497-5508
Authors:
Zepeda-Ruiz, LA
Maroudas, D
Weinberg, WH
Citation: La. Zepeda-ruiz et al., Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy, J APPL PHYS, 85(7), 1999, pp. 3677-3695
Authors:
Gungor, MR
Maroudas, D
Citation: Mr. Gungor et D. Maroudas, Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation, J APPL PHYS, 85(4), 1999, pp. 2233-2246
Authors:
Nosho, BZ
Zepeda-Ruiz, LA
Pelzel, RI
Weinberg, WH
Maroudas, D
Citation: Bz. Nosho et al., Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations, APPL PHYS L, 75(6), 1999, pp. 829-831
Authors:
Zepeda-Ruiz, LA
Maroudas, D
Weinberg, WH
Citation: La. Zepeda-ruiz et al., Semicoherent interface formation and structure in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 418(2), 1998, pp. L68-L72