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Citation: Dk. Dosev et al., Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition, THIN SOL FI, 383(1-2), 2001, pp. 307-309

Authors: Puigdollers, J Dosev, D Orpella, A Vox, C Peiro, D Bertomeu, J Marsal, LF Pallares, J Andreu, J Alcubilla, R

Citation: J. Puigdollers et al., Microcrystalline silicon thin film transistors obtained by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 526-529

Authors: Orpella, A Puigdollers, J Bardes, D Alcubilla, R Marsal, LF Pallares, J

Citation: A. Orpella et al., Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors, SOL ST ELEC, 44(9), 2000, pp. 1543-1548

Authors: Puigdollers, J Orpella, A Dosev, D Voz, C Peiro, D Pallares, J Marsal, LF Bertomeu, J Andreu, J Alcubilla, R

Citation: J. Puigdollers et al., Thin film transistors obtained by hot wire CVD, J NON-CRYST, 266, 2000, pp. 1304-1309

Authors: Orpella, A Bardes, D Alcubilla, R Marsal, LF Pallares, J

Citation: A. Orpella et al., In situ-doped amorphous Si0.8Co0.2 emitter bipolar transistors, IEEE ELEC D, 20(11), 1999, pp. 592-594

Authors: Marsal, LF Pallares, J Correig, X Orpella, A Bardes, D Alcubilla, R

Citation: Lf. Marsal et al., Analysis of conduction mechanisms in annealed n-Si1-xCx : H/p-crystalline Si heterojunction diodes for different doping concentrations, J APPL PHYS, 85(2), 1999, pp. 1216-1221