AAAAAA

   
Results: 1-12 |
Results: 12
Fabrication of SiGe optical waveguides using VLSI processing techniques
Authors: Pearson, MRT Jessop, PE Bruce, DM Wallace, S Mascher, P Ojha, J
Citation: Mrt. Pearson et al., Fabrication of SiGe optical waveguides using VLSI processing techniques, J LIGHTW T, 19(3), 2001, pp. 363-370
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Authors: Lourenco, MA Knights, AP Homewood, KP Gwilliam, RM Simpson, PJ Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Defect depth profile in CdTe : Cl by positron annihilation
Authors: Peng, ZL Simpson, PJ Mascher, P
Citation: Zl. Peng et al., Defect depth profile in CdTe : Cl by positron annihilation, EL SOLID ST, 3(3), 2000, pp. 150-152
Characterization of silicon oxynitride films using ion beam analysis techniques
Authors: Walker, SR Davies, JA Mascher, P Wallace, SG Lennard, WN Massoumi, GR Elliman, RG Ophel, TR Timmers, H
Citation: Sr. Walker et al., Characterization of silicon oxynitride films using ion beam analysis techniques, NUCL INST B, 170(3-4), 2000, pp. 461-466
Compact hydrogenated amorphous germanium films by ion-beam sputtering deposition
Authors: Comedi, D Dondeo, F Chambouleyron, I Peng, ZL Mascher, P
Citation: D. Comedi et al., Compact hydrogenated amorphous germanium films by ion-beam sputtering deposition, J NON-CRYST, 266, 2000, pp. 713-716
Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
Authors: Wallace, SG Robinson, BJ Mascher, P Haugen, HK Thompson, DA Dalacu, D Martinu, L
Citation: Sg. Wallace et al., Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design, APPL PHYS L, 76(19), 2000, pp. 2791-2793
Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors
Authors: Boudreau, MG Wallace, SG Balcaitis, G Murugkar, S Haugen, HK Mascher, P
Citation: Mg. Boudreau et al., Application of in situ ellipsometry in the fabrication of thin-film optical coatings on semiconductors, APPL OPTICS, 39(6), 2000, pp. 1053-1058
Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge : H
Authors: Peng, ZL Comedi, D Dondeo, F Chambouleyron, I Simpson, PJ Mascher, P
Citation: Zl. Peng et al., Investigation of ion-bombardment effects on the formation of voids during deposition of a-Ge : H, PHYSICA B, 274, 1999, pp. 579-583
Induced defects in ZnS by electron and proton irradiation and defect-annealing behavior
Authors: Brunner, S Puff, W Balogh, AG Mascher, P
Citation: S. Brunner et al., Induced defects in ZnS by electron and proton irradiation and defect-annealing behavior, PHYSICA B, 274, 1999, pp. 898-901
Metal ion and oxygen vacancies in bulk and thin film La1-xSrxCoO3
Authors: Friessnegg, T Madhukar, S Nielsen, B Moodenbaugh, AR Aggarwal, S Keeble, DJ Poindexter, EH Mascher, P Ramesh, R
Citation: T. Friessnegg et al., Metal ion and oxygen vacancies in bulk and thin film La1-xSrxCoO3, PHYS REV B, 59(20), 1999, pp. 13365-13369
Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy
Authors: Tessaro, G Mascher, P
Citation: G. Tessaro et P. Mascher, Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy, J CRYST GR, 197(3), 1999, pp. 581-585
Sulfur passivation of InP InGaAs metal-semiconductor-metal photodetectors
Authors: Pang, Z Song, KC Mascher, P Simmons, JG
Citation: Z. Pang et al., Sulfur passivation of InP InGaAs metal-semiconductor-metal photodetectors, J ELCHEM SO, 146(5), 1999, pp. 1946-1951
Risultati: 1-12 |