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Results:
1-16
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Results: 16
Authors:
Lee, TW
Hagness, SC
Zhou, DL
Mawst, LJ
Citation: Tw. Lee et al., Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers, IEEE PHOTON, 13(8), 2001, pp. 770-772
Authors:
Tansu, N
Mawst, LJ
Citation: N. Tansu et Lj. Mawst, High-performance strain-compensated InGaAs-GaAsP-GaAs (lambda=1.17 mu m) quantum-well diode lasers, IEEE PHOTON, 13(3), 2001, pp. 179-181
Authors:
Tansu, N
Zhou, D
Mawst, LJ
Citation: N. Tansu et al., Low-temperature sensitive, compressively strained InGaAsP active (lambda=0.78-0.85 mu m) region diode lasers, IEEE PHOTON, 12(6), 2000, pp. 603-605
Authors:
Rusli, S
Al-Muhanna, A
Earles, T
Mawst, LJ
Citation: S. Rusli et al., 1W CW reliable lambda=730nm aluminium-free active layer diode laser, ELECTR LETT, 36(7), 2000, pp. 630-631
Authors:
Zhou, D
Mawst, LJ
Citation: D. Zhou et Lj. Mawst, Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays, APPL PHYS L, 77(15), 2000, pp. 2307-2309
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Mawst, LJ
Kuech, TF
Citation: Pd. Moran et al., Experimental test for elastic compliance during growth on glass-bonded compliant substrates, APPL PHYS L, 76(18), 2000, pp. 2541-2543
Authors:
Zhou, D
Mawst, LJ
Citation: D. Zhou et Lj. Mawst, Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers, APPL PHYS L, 76(13), 2000, pp. 1659-1661
Authors:
Yang, H
Mawst, LJ
Botez, D
Citation: H. Yang et al., 1.6 W continuous-wave coherent power from large-index-step (Delta n approximate to 0.1) near-resonant, antiguided diode laser arrays, APPL PHYS L, 76(10), 2000, pp. 1219-1221
Authors:
Mawst, LJ
Citation: Lj. Mawst, InGaAsP/GaAs quantum well lasers grown by metalorganic chemical vapor deposition, OPTOEL PROP, 9, 2000, pp. 727-786
Authors:
Mawst, LJ
Rusli, S
Al-Muhanna, A
Wade, JK
Citation: Lj. Mawst et al., Short-wavelength (0.7 mu m <lambda < 0.78 mu m) high-power InGaAsP-active diode lasers, IEEE S T QU, 5(3), 1999, pp. 785-791
Authors:
Mirabedini, AR
Mawst, LJ
Botez, D
Marsland, RA
Citation: Ar. Mirabedini et al., High reproducibility for deep-quantum-well resonant tunnelling diodes grown by metal organic chemical vapour deposition, ELECTR LETT, 35(8), 1999, pp. 669-670
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Cederberg, JG
Mawst, LJ
Kuech, TF
Citation: Pd. Moran et al., InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality, APPL PHYS L, 75(11), 1999, pp. 1559-1561
Authors:
Nesnidal, MP
Earles, T
Mawst, LJ
Botez, D
Buus, J
Citation: Mp. Nesnidal et al., 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating, APPL PHYS L, 73(5), 1999, pp. 587-589
Authors:
Mawst, LJ
Yang, H
Nesnidal, M
Al-Muhanna, A
Botez, D
Vang, TA
Alvarez, FD
Johnson, R
Citation: Lj. Mawst et al., High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedbackdiode lasers, J CRYST GR, 195(1-4), 1998, pp. 609-616
Authors:
Li, J
Mirabedini, A
Mawst, LJ
Savage, DE
Matyi, RJ
Kuech, TF
Citation: J. Li et al., Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes, J CRYST GR, 195(1-4), 1998, pp. 617-623
Authors:
Al-Muhanna, A
Mawst, LJ
Botez, D
Garbuzov, DZ
Martinelli, RU
Connolly, JC
Citation: A. Al-muhanna et al., High-power (> 10 W) continuous-wave operation from 100-mu m-aperture 0.97-mu m-emitting Al-free diode lasers, APPL PHYS L, 73(9), 1998, pp. 1182-1184
Risultati:
1-16
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