Authors:
Hartner, W
Bosk, P
Schindler, G
Schroeder, H
Waser, R
Dehm, C
Mazure, C
Citation: W. Hartner et al., Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing, INTEGR FERR, 31(1-4), 2000, pp. 341-350
Authors:
Hartner, W
Schindler, G
Weinrich, V
Ahlstedt, M
Schroeder, H
Waser, R
Dehm, C
Mazure, C
Citation: W. Hartner et al., Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films, INTEGR FERR, 27(1-4), 1999, pp. 1257-1269
Authors:
Roeder, JF
Hendrix, BC
Hintermaier, F
Desrochers, DA
Baum, TH
Bhandari, G
Chappuis, M
Van Buskirk, PC
Dehm, C
Fritsch, E
Nagel, N
Wendt, H
Cerva, H
Honlein, W
Mazure, C
Citation: Jf. Roeder et al., Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD), J EUR CERAM, 19(6-7), 1999, pp. 1463-1466
Authors:
Beitel, G
Wendt, H
Fritsch, E
Weinrich, V
Engelhardt, M
Hasler, B
Rohr, T
Bergmann, R
Scheler, U
Malek, KH
Nagel, N
Gschwandtner, A
Pamler, W
Honlein, W
Dehm, C
Mazure, C
Citation: G. Beitel et al., A novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications, MICROEL ENG, 48(1-4), 1999, pp. 299-302