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Results: 1-9 |
Results: 9
Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers
Authors: Li, W Turpeinen, J Melanen, P Savolainen, P Uusimaa, P Pessa, M
Citation: W. Li et al., Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers, J CRYST GR, 230(3-4), 2001, pp. 533-536
Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
Authors: Saarinen, M Xiang, N Vilokkinen, V Melanen, P Orsila, S Uusimaa, P Savolainen, P Toivonen, M Pessa, M
Citation: M. Saarinen et al., Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 324-328
Resonant cavity light-emitting diodes grown by solid source MBE
Authors: Orsila, S Leinonen, T Uusimaa, P Saarinen, M Guina, M Sipila, P Vilokkinen, V Melanen, P Dumitrescu, M Pessa, M
Citation: S. Orsila et al., Resonant cavity light-emitting diodes grown by solid source MBE, J CRYST GR, 227, 2001, pp. 346-351
Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy
Authors: Li, W Turpeinen, J Melanen, P Savolainen, P Uusimaa, P Pessa, M
Citation: W. Li et al., Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 541-544
Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers
Authors: Li, W Turpeinen, J Melanen, P Savolainen, P Uusimaa, P Pessa, M
Citation: W. Li et al., Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers, APPL PHYS L, 78(1), 2001, pp. 91-92
Resonant cavity light-emitting diodes at 660 and 880 nm
Authors: Vilokkinen, V Sipila, P Melanen, P Saarinen, M Orsila, S Dumitrescu, M Savolainen, P Toivonen, M Pessa, M
Citation: V. Vilokkinen et al., Resonant cavity light-emitting diodes at 660 and 880 nm, MAT SCI E B, 74(1-3), 2000, pp. 165-167
Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
Authors: Dumitrescu, M Toikkanen, L Sipila, P Vilokkinen, V Melanen, P Saarinen, M Orsila, S Savolainen, P Toivonen, M Pessa, M
Citation: M. Dumitrescu et al., Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 449-460
Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy
Authors: Pessa, M Toivonen, M Savolainen, P Orsila, S Sipila, P Saarinen, M Melanen, P Vilokkinen, V Uusimaa, P Haapamaa, J
Citation: M. Pessa et al., Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy, THIN SOL FI, 367(1-2), 2000, pp. 260-266
AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy
Authors: Savolainen, P Toivonen, M Orsila, S Saarinen, M Melanen, P Vilokkinen, V Dumitrescu, M Panarello, T Pessa, M
Citation: P. Savolainen et al., AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy, J ELEC MAT, 28(8), 1999, pp. 980-985
Risultati: 1-9 |