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Results:
1-7
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Results: 7
Authors:
Kazanskii, AG
Mell, H
Terukov, EI
Forsh, PA
Citation: Ag. Kazanskii et al., Effect of temperature on photoconductivity and its decay in microcrystalline silicon, SEMICONDUCT, 35(8), 2001, pp. 953-955
Authors:
Mell, H
Nikolaev, YA
Rud', VY
Rud', YV
Terukov, EI
Citation: H. Mell et al., Photoelectric phenomena in (mu c(x)a(1-x))-Si : H/c-Si heterostructures, SEMICONDUCT, 35(11), 2001, pp. 1259-1262
Authors:
Forsh, PA
Kazanskii, AG
Mell, H
Terukov, EI
Citation: Pa. Forsh et al., Photoelectrical properties of microcrystalline silicon films, THIN SOL FI, 383(1-2), 2001, pp. 251-253
Authors:
Mai, F
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Marbach, K
Meier, P
Mell, H
Peters, D
Thiess, H
Ackermann, H
Stockmann, HJ
Citation: F. Mai et al., Local structure of implanted B in amorphous Si, APPL PHYS L, 79(3), 2001, pp. 338-340
Authors:
Kazanskii, AG
Kozlov, SN
Mell, H
Forsh, PA
Citation: Ag. Kazanskii et al., The effect of illumination on the electric and photoelectric properties ofmu c-Si : H films weakly doped with boron, TECH PHYS L, 26(5), 2000, pp. 410-411
Authors:
Kazanskii, AG
Mell, H
Terukov, EI
Forsh, PA
Citation: Ag. Kazanskii et al., Absorption and photoconductivity of boron-compensated mu c-Si : H, SEMICONDUCT, 34(3), 2000, pp. 367-369
Authors:
Terukov, EI
Kudoyarova, VK
Davydov, VY
Koughia, KV
Weiser, G
Mell, H
Citation: Ei. Terukov et al., The influence of deposition parameters on the structure of nanocrystallinesilicon, MAT SCI E B, 69, 2000, pp. 266-271
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