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Results:
1-8
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Results: 8
Authors:
Schoning, MJ
Schmidt, C
Schubert, J
Zander, W
Mesters, S
Kordos, P
Luth, H
Legin, A
Seleznev, B
Vlasov, YG
Citation: Mj. Schoning et al., Thin film sensors on the basis of chalcogenide glass materials prepared bypulsed laser deposition technique, SENS ACTU-B, 68(1-3), 2000, pp. 254-259
Authors:
Lenssen, D
Carius, R
Mesters, S
Guggi, D
Bay, HL
Mantl, S
Citation: D. Lenssen et al., Structural, electrical and optical characterization of semiconducting Ru2Si3, MICROEL ENG, 50(1-4), 2000, pp. 243-248
Authors:
Bozzo, S
Lazzari, JL
Coudreau, C
Ronda, A
d'Avitaya, FA
Derrien, J
Mesters, S
Hollaender, B
Gergaud, P
Thomas, O
Citation: S. Bozzo et al., Chemical vapor deposition of silicon-germanium heterostructures, J CRYST GR, 216(1-4), 2000, pp. 171-184
Authors:
Schubert, J
Schoning, MJ
Schmidt, C
Siegert, M
Mesters, S
Zander, W
Kordos, P
Luth, H
Legin, A
Mourzina, YG
Seleznev, B
Vlasov, YG
Citation: J. Schubert et al., Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique, APPL PHYS A, 69, 1999, pp. S803-S805
Authors:
Hollander, B
Mantl, S
Liedtke, R
Mesters, S
Herzog, HJ
Kibbel, H
Hackbarth, T
Citation: B. Hollander et al., Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation, NUCL INST B, 148(1-4), 1999, pp. 200-210
Authors:
Mantl, S
Hollander, B
Liedtke, R
Mesters, S
Herzog, HJ
Kibbel, H
Hackbarth, T
Citation: S. Mantl et al., Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation, NUCL INST B, 147(1-4), 1999, pp. 29-34
Authors:
Zhao, QT
Dolle, M
Kappius, L
Klinkhammer, F
Mesters, S
Mantl, S
Citation: Qt. Zhao et al., Nanometer patterning of epitaxial CoSi2/Si(100) by local oxidation, SOL ST ELEC, 43(6), 1999, pp. 1091-1094
Authors:
Lenssen, D
Bay, HL
Mesters, S
Dieker, C
Guggi, D
Carius, R
Mantl, S
Citation: D. Lenssen et al., Growth and structural characterization of semiconducting Ru2Si3, J LUMINESC, 80(1-4), 1998, pp. 461-465
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