AAAAAA

   
Results: 1-13 |
Results: 13
80 GHz MMIC HEMT VCO
Authors: Radisic, V Samoska, L Micovic, M Hu, M Janke, P Ngo, C Nguyen, L
Citation: V. Radisic et al., 80 GHz MMIC HEMT VCO, IEEE MICR W, 11(8), 2001, pp. 325-327
164-GHz MMIC HEMT doubler
Authors: Radisic, V Micovic, M Hu, M Janke, P Ngo, C Nguyen, L Samoska, L Morgan, M
Citation: V. Radisic et al., 164-GHz MMIC HEMT doubler, IEEE MICR W, 11(6), 2001, pp. 241-243
The state-of-the-art of GaAs and InP power devices and amplifiers
Authors: Nguyen, C Micovic, M
Citation: C. Nguyen et M. Micovic, The state-of-the-art of GaAs and InP power devices and amplifiers, IEEE DEVICE, 48(3), 2001, pp. 472-478
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasmaassisted molecular beam epitaxy
Authors: Micovic, M Kurdoghlian, A Janke, P Hashimoto, P Wong, DWS Moon, JS McCray, L Nguyen, C
Citation: M. Micovic et al., AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasmaassisted molecular beam epitaxy, IEEE DEVICE, 48(3), 2001, pp. 591-596
GaN/AlGaN HEMTs operating at 20GHz with continuous-wave power density > 6W/mm
Authors: Moon, JS Micovic, M Janke, P Hashimoto, P Wong, WS Widman, RD McCray, L Kurdoghlian, A Nguyen, C
Citation: Js. Moon et al., GaN/AlGaN HEMTs operating at 20GHz with continuous-wave power density > 6W/mm, ELECTR LETT, 37(8), 2001, pp. 528-530
Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors
Authors: Nozaki, S Feick, H Weber, ER Micovic, M Nguyen, C
Citation: S. Nozaki et al., Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors, APPL PHYS L, 78(19), 2001, pp. 2896-2898
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
Authors: Nguyen, NX Micovic, M Wong, WS Hashimoto, P McCray, LM Janke, P Nguyen, C
Citation: Nx. Nguyen et al., High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE, ELECTR LETT, 36(5), 2000, pp. 468-469
Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10GHz
Authors: Nguyen, NX Micovic, M Wong, WS Hashimoto, P Janke, P Harvey, D Nguyen, C
Citation: Nx. Nguyen et al., Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10GHz, ELECTR LETT, 36(5), 2000, pp. 469-471
Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate
Authors: Micovic, M Matloubian, M Hu, M Harvey, DS Nguyen, C Janke, P
Citation: M. Micovic et al., Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate, ELECTR LETT, 36(4), 2000, pp. 357-358
GaN/AlGaN high electron mobility transistors with f(tau) of 110GHz
Authors: Micovic, M Nguven, NX Janke, P Wong, WS Hashimoto, P McCray, LM Nguyen, C
Citation: M. Micovic et al., GaN/AlGaN high electron mobility transistors with f(tau) of 110GHz, ELECTR LETT, 36(4), 2000, pp. 358-359
A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide
Authors: Lubyshev, D Micovic, M Gratteau, N Cai, WZ Miller, DL Ray, O Streater, RW SpringThorpe, AJ
Citation: D. Lubyshev et al., A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide, J VAC SCI B, 17(3), 1999, pp. 1180-1184
Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy
Authors: Ren, Y Micovic, M Cai, WZ Mohney, S Lord, SM Miller, DL Mayer, TS
Citation: Y. Ren et al., Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy, J ELEC MAT, 28(7), 1999, pp. 887-893
Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7Asgrown by solid-source molecular beam epitaxy using carbon tetrabromide
Authors: Lubyshev, D Micovic, M Gratteau, N Cai, WZ Miller, DL Ray, O Pusep, YA Silva, MTO Galzerani, JC Bacher, K
Citation: D. Lubyshev et al., Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7Asgrown by solid-source molecular beam epitaxy using carbon tetrabromide, J CRYST GR, 202, 1999, pp. 1089-1092
Risultati: 1-13 |