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Results: 1-12 |
Results: 12
Optical properties of isostructural beta-FeSi2, OsSi2, Fe0.5Os0.5Si2 and Os0.5Fe0.5Si2
Authors: Migas, DB Henrion, W Rebien, M Shaposhnikov, VL Borisenko, VE Miglio, L
Citation: Db. Migas et al., Optical properties of isostructural beta-FeSi2, OsSi2, Fe0.5Os0.5Si2 and Os0.5Fe0.5Si2, OPT MATER, 17(1-2), 2001, pp. 335-338
Optical properties of semiconducting RU2Si3
Authors: Shaposhnikov, VL Ivanenko, LI Migas, DB Lenssen, D Carius, R Mantl, S Borisenko, VE
Citation: Vl. Shaposhnikov et al., Optical properties of semiconducting RU2Si3, OPT MATER, 17(1-2), 2001, pp. 339-341
Electronic and optical properties of isostructural beta-FeSi2 and OsSi2 - art. no. 075208
Authors: Migas, DB Miglio, L Henrion, W Rebien, M Marabelli, F Cook, BA Shaposhnikov, VL Borisenko, VE
Citation: Db. Migas et al., Electronic and optical properties of isostructural beta-FeSi2 and OsSi2 - art. no. 075208, PHYS REV B, 6407(7), 2001, pp. 5208
Electronic and optical properties of the (FeOs)Si-2 ternaries
Authors: Migas, DB Miglio, L
Citation: Db. Migas et L. Miglio, Electronic and optical properties of the (FeOs)Si-2 ternaries, APPL PHYS L, 79(14), 2001, pp. 2175-2177
Defect-induced tetragonalization of the orthorhombic TiSi(2)C49 phase: X-ray diffraction and first principles calculations
Authors: La Via, F Grimaldi, MG Migas, DB Miglio, L
Citation: F. La Via et al., Defect-induced tetragonalization of the orthorhombic TiSi(2)C49 phase: X-ray diffraction and first principles calculations, APPL PHYS L, 78(6), 2001, pp. 739-741
Formation of the TiSi(2)C40 as an intermediate phase during the reaction of the Si/Ta/Ti system
Authors: La Via, F Mammoliti, F Corallo, G Grimaldi, MG Migas, DB Miglio, L
Citation: F. La Via et al., Formation of the TiSi(2)C40 as an intermediate phase during the reaction of the Si/Ta/Ti system, APPL PHYS L, 78(13), 2001, pp. 1864-1866
Narrow-gap semiconducting silicides: the band structure
Authors: Filonov, AB Migas, DB Shaposhnikov, VL Borisenko, VE Heinrich, A
Citation: Ab. Filonov et al., Narrow-gap semiconducting silicides: the band structure, MICROEL ENG, 50(1-4), 2000, pp. 249-255
Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111)
Authors: Migas, DB Miglio, L
Citation: Db. Migas et L. Miglio, Band-gap modifications of beta-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111), PHYS REV B, 62(16), 2000, pp. 11063-11070
Band structure of semiconducting rhenium silicide
Authors: Migas, DB Shaposhnikov, VL Filonov, AB Dorozhkin, NN Borisenko, VE
Citation: Db. Migas et al., Band structure of semiconducting rhenium silicide, DAN BELARUS, 44(1), 2000, pp. 54-56
Electronic properties of semiconducting rhenium silicide
Authors: Filonov, AB Migas, DB Shaposhnikov, VL Dorozhkin, NN Borisenko, VE Lange, H Heinrich, A
Citation: Ab. Filonov et al., Electronic properties of semiconducting rhenium silicide, EUROPH LETT, 46(3), 1999, pp. 376-381
Electronic properties of isostructural ruthenium and osmium silicides and germanides
Authors: Filonov, AB Migas, DB Shaposhnikov, VL Dorozhkin, NN Borisenko, VE Heinrich, A Lange, H
Citation: Ab. Filonov et al., Electronic properties of isostructural ruthenium and osmium silicides and germanides, PHYS REV B, 60(24), 1999, pp. 16494-16498
Zoning of ruthenium silicide and germanide
Authors: Shaposhnikov, VL Migas, DB Filonov, AB Borisenko, VE
Citation: Vl. Shaposhnikov et al., Zoning of ruthenium silicide and germanide, DAN BELARUS, 43(4), 1999, pp. 51-53
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