Authors: Mimila-Arroyo, J Bland, SW

Citation: J. Mimila-arroyo et Sw. Bland, Hydrogen co-doping in III-V semiconductors: Dopant passivation and carbon reactivation kinetics in C-GaAs, MOD PHY L B, 15(17-19), 2001, pp. 585-592

Authors: Mimila-Arroyo, J Reyes, JD

Citation: J. Mimila-arroyo et Jd. Reyes, Modeling the CVD growth kinetics of III-V compounds, MOD PHY L B, 15(17-19), 2001, pp. 647-650

Authors: Mimila-Arroyo, J Diaz-Reyes, J

Citation: J. Mimila-arroyo et J. Diaz-reyes, Modeling halogen chemical vapor deposition for III-V semiconductor compounds, J CRYST GR, 225(1), 2001, pp. 50-58

Authors: Mimila-Arroyo, J Lusson, A Chevallier, J Barbe, M Theys, B Jomard, F Bland, SW

Citation: J. Mimila-arroyo et al., Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(19), 2001, pp. 3095-3097

Authors: Gandouzi, M Bourgoin, JC Mimila-Arroyo, J Grattepain, C Grattepain, C

Citation: M. Gandouzi et al., Impurity incorporation during epitaxial growth of GaAs by chemical reaction, J CRYST GR, 218(2-4), 2000, pp. 167-172

Authors: Mimila-Arroyo, J Bland, SW

Citation: J. Mimila-arroyo et Sw. Bland, Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers, APPL PHYS L, 77(8), 2000, pp. 1164-1166