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Results: 1-12 |
Results: 12

Authors: Kim, HJ Park, YJ Min, BD Hyon, CK Park, SK Kim, EK Kim, TW
Citation: Hj. Kim et al., Dependence of buffer layer on the distribution of InAs quantum dots, JPN J A P 1, 40(4A), 2001, pp. 2146-2149

Authors: Hyon, CK Choi, SC Hwang, SW Min, BD Ahn, D Park, YJ Kim, EK
Citation: Ck. Hyon et al., Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope, J KOR PHYS, 38(3), 2001, pp. 251-254

Authors: Lee, CJ Min, BD Kim, SJ
Citation: Cj. Lee et al., Effect of heavy in-situ phosphorus doping on Si1-xGex epitaxial growth by low-pressure chemical-vapor deposition, J KOR PHYS, 37(5), 2000, pp. 527-530

Authors: Son, MH Jung, SK Min, BD Hyun, CK Choi, BH Kim, EK Kim, Y Lim, JS
Citation: Mh. Son et al., Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern, JPN J A P 2, 38(9AB), 1999, pp. L1003-L1005

Authors: Lee, H Seong, E Kim, SM Son, MH Min, BD Kim, Y Kim, EK
Citation: H. Lee et al., Ellipsometric study of self-assembled InAs/GaAs quantum dots, JPN J A P 2, 38(3A), 1999, pp. L245-L247

Authors: Min, BD Youm, JH Kwon, BH
Citation: Bd. Min et al., SVM-based hysteresis current controller for three-phase PWM rectifier, IEE P-EL PO, 146(2), 1999, pp. 225-230

Authors: Lee, H Seong, EZ Kim, SM Son, MH Min, BD Kim, Y Kim, EK
Citation: H. Lee et al., Optical study of InAs/GaAs quantum dots using spectroscopic ellipsometry, J KOR PHYS, 34, 1999, pp. S61-S63

Authors: Kim, Y Min, BD Kim, EK
Citation: Y. Kim et al., Ripening suppression and large photoluminescence blueshift in aligned InGaAs quantum dots on a vicinal, (100) GaAs substrate, J APPL PHYS, 85(4), 1999, pp. 2140-2145

Authors: Min, BD Youm, JH Kwon, BH
Citation: Bd. Min et al., A space vector modulation based hysteresis current controller for the PWM rectifier with voltage link, INT J ELECT, 86(3), 1999, pp. 363-377

Authors: Jung, SK Hyon, CK Park, JH Hwang, SW Ahn, D Son, MH Min, BD Kim, Y Kim, EK
Citation: Sk. Jung et al., Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots, APPL PHYS L, 75(8), 1999, pp. 1167-1169

Authors: Jung, SK Choi, BH Kim, SI Hyon, CK Min, BD Hwang, SW Park, JH Kim, Y Kim, EK Min, SK
Citation: Sk. Jung et al., Direct transport measurements through an ensemble of INAS self-assembled quantum dots, JPN J A P 1, 37(12B), 1998, pp. 7169-7171

Authors: Min, BD Kim, Y Kim, EK Min, SK Park, J
Citation: Bd. Min et al., The formation and optical properties of InGaAs quantum dots on exact and 2degrees off (100) GaAs substrates, J KOR PHYS, 33, 1998, pp. S291-S294
Risultati: 1-12 |