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Results: 1-12 |
Results: 12
Reaction of nitrogen(I) oxide with nitrogen-fixing systems on the basis oflithium, chlorotrimethylsilane, and transition metal compounds
Authors: Leont'ev, AV Mironov, OA Fomicheva, OA Proskurnina, MV Zefirov, NS
Citation: Av. Leont'Ev et al., Reaction of nitrogen(I) oxide with nitrogen-fixing systems on the basis oflithium, chlorotrimethylsilane, and transition metal compounds, RUSS J G CH, 71(6), 2001, pp. 905-906
Low-temperature electron transport in Si with an MBE-grown Sb delta layer - art. no. 075402
Authors: Agan, S Mironov, OA Parker, EHC Whall, TE Parry, CP Kashirin, VY Komnik, YF Krasovitsky, VB Emeleus, CJ
Citation: S. Agan et al., Low-temperature electron transport in Si with an MBE-grown Sb delta layer - art. no. 075402, PHYS REV B, 6307(7), 2001, pp. 5402
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures
Authors: Fedina, L Lebedev, OI Van Tendeloo, G Van Landuyt, J Mironov, OA Parker, EHC
Citation: L. Fedina et al., In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures, PHYS REV B, 61(15), 2000, pp. 10336-10345
Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions
Authors: Andrievskii, VV Berkutov, IB Komnik, YF Mironov, OA Whall, TE
Citation: Vv. Andrievskii et al., Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions, LOW TEMP PH, 26(12), 2000, pp. 890-893
Magnetic-field oscillations of the critical current and the pinning force in PbTe/PbS semiconductor superlattices and YBa2Cu3O7-delta films
Authors: Fedorenko, AI Zorchenko, VV Sipatov, AY Mironov, OA Chistyakov, SV
Citation: Ai. Fedorenko et al., Magnetic-field oscillations of the critical current and the pinning force in PbTe/PbS semiconductor superlattices and YBa2Cu3O7-delta films, J EXP TH PH, 90(6), 2000, pp. 1010-1021
The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples
Authors: Agan, S Mironov, OA Parker, EHC Whall, TE
Citation: S. Agan et al., The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples, SEMIC SCI T, 15(6), 2000, pp. 551-556
Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE
Authors: Agan, S Mironov, OA Tsaousidou, M Whall, TE Parker, EHC Butcher, PN
Citation: S. Agan et al., Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE, MICROEL ENG, 51-2, 2000, pp. 527-534
Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)(16) superlattices
Authors: Mironov, OA Fulgoni, DJF Parry, CP Cooke, GA Dowsett, MG Parker, EHC Chtcherbatchev, KD Bassas, JM Romano-Rodriguez, A Perez-Rodriguez, A Morante, JR
Citation: Oa. Mironov et al., Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)(16) superlattices, THIN SOL FI, 367(1-2), 2000, pp. 176-179
Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures
Authors: Ansaripour, G Braithwaite, G Myronov, M Mironov, OA Parker, EHC Whall, TE
Citation: G. Ansaripour et al., Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures, APPL PHYS L, 76(9), 2000, pp. 1140-1142
Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure
Authors: Sadeghzadeh, MA Horrell, AI Mironov, OA Parker, EHC Whall, TE Kearney, MJ
Citation: Ma. Sadeghzadeh et al., Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure, APPL PHYS L, 76(18), 2000, pp. 2568-2570
Oscillations and quantization of resistance at the temperature critical points of PbS-PbTe-PbS three-layer films on (001) KCl
Authors: Fedorenko, AI Zorchenko, VV Sipatov, AY Mironov, OA Chistyakov, SV Nashchekina, ON
Citation: Ai. Fedorenko et al., Oscillations and quantization of resistance at the temperature critical points of PbS-PbTe-PbS three-layer films on (001) KCl, PHYS SOL ST, 41(9), 1999, pp. 1551-1554
High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
Authors: Barradas, NP Knights, AP Jeynes, C Mironov, OA Grasby, TJ Parker, EHC
Citation: Np. Barradas et al., High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms, PHYS REV B, 59(7), 1999, pp. 5097-5105
Risultati: 1-12 |