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Results:
1-8
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Results: 8
Authors:
Hayden, RK
Missous, M
Kelly, MJ
Citation: Rk. Hayden et al., Precision growth for the manufacture of semiconductor heterostructure devices, SEMIC SCI T, 16(8), 2001, pp. 676-678
Authors:
Poole, BM
Singer, KE
Missous, M
Citation: Bm. Poole et al., Temperature characteristics of near-infrared (1.7 micron), resonant cavitylight-emitting diodes, IEE P-OPTO, 147(1), 2000, pp. 22-26
Authors:
de la Fargue, M
Missous, M
Citation: M. De La Fargue et M. Missous, Effects of high index plane on device performances of near-infrared InGaAs/GaAs/AlGaAs resonant-cavity light-emitting diodes, IEE P-OPTO, 147(1), 2000, pp. 27-30
Authors:
Buckle, PD
Dawson, P
Lynch, MA
Kuo, CY
Missous, M
Truscott, WS
Citation: Pd. Buckle et al., An inter-subband device with terahertz applications, IEEE MICR T, 48(4), 2000, pp. 632-638
Authors:
Fleischer, S
Hu, YF
Beling, CD
Fung, S
Smith, TL
Moulding, KM
Weng, HM
Missous, M
Citation: S. Fleischer et al., Positron beam study of low-temperature-grown GaAs with aluminum delta layers, APPL SURF S, 149(1-4), 1999, pp. 159-164
Authors:
Pilkington, SJ
Missous, M
Citation: Sj. Pilkington et M. Missous, The growth of epitaxial aluminium on As containing compound semiconductors, J CRYST GR, 196(1), 1999, pp. 1-12
Authors:
Fleischer, S
Surya, C
Hu, YF
Beling, CD
Fung, S
Smith, TL
Moulding, KM
Missous, M
Citation: S. Fleischer et al., A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature, J CRYST GR, 196(1), 1999, pp. 53-61
Authors:
Laine, T
Saarinen, K
Hautojarvi, P
Corbel, C
Missous, M
Citation: T. Laine et al., Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity, J APPL PHYS, 86(4), 1999, pp. 1888-1897
Risultati:
1-8
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