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Results:
1-7
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Results: 7
Authors:
Verghese, S
McIntosh, KA
Molnar, RJ
Mahoney, LJ
Aggarwal, RL
Geis, MW
Molvar, KM
Duerr, EK
Melngailis, I
Citation: S. Verghese et al., GaN avalanche photodiodes operating in linear-gain mode and Geiger mode, IEEE DEVICE, 48(3), 2001, pp. 502-511
Authors:
Chen, CL
Mathews, RH
Mahoney, LJ
Calawa, SD
Sage, JP
Molvar, KM
Parker, CD
Maki, PA
Citation: Cl. Chen et al., Resonant-tunneling-diode relaxation oscillator, SOL ST ELEC, 44(10), 2000, pp. 1853-1856
Authors:
McIntosh, KA
Molnar, RJ
Mahoney, LJ
Molvar, KM
Efremow, N
Verghese, S
Citation: Ka. Mcintosh et al., Ultraviolet photon counting with GaN avalanche photodiodes, APPL PHYS L, 76(26), 2000, pp. 3938-3940
Authors:
Mathews, RH
Sage, JP
Sollner, TCLG
Calawa, SD
Chen, CL
Mahoney, LJ
Maki, PA
Molvar, KM
Citation: Rh. Mathews et al., A new RTD-FET logic family, P IEEE, 87(4), 1999, pp. 596-605
Authors:
Chen, CL
Mahoney, LJ
Calawa, SD
Molvar, KM
Citation: Cl. Chen et al., Effects of implant spacer on InP-based self-aligned pseudomorphic SIGFETs, ELECTR LETT, 35(9), 1999, pp. 746-748
Authors:
McIntosh, KA
Molnar, RJ
Mahoney, LJ
Lightfoot, A
Geis, MW
Molvar, KM
Melngailis, I
Aggarwal, RL
Goodhue, WD
Choi, SS
Spears, DL
Verghese, S
Citation: Ka. Mcintosh et al., GaN avalanche photodiodes grown by hydride vapor-phase epitaxy, APPL PHYS L, 75(22), 1999, pp. 3485-3487
Authors:
Chen, CL
Mahoney, LJ
Calawa, SD
Molvar, KM
Maki, PA
Mathews, RH
Sage, JP
Sollner, TCLG
Citation: Cl. Chen et al., Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration, APPL PHYS L, 74(26), 1999, pp. 4058-4060
Risultati:
1-7
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