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Vincent, E
Roy, D
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Pananakakis, G
Ghibaudo, G
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Authors:
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Monsieur, F
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Ghibaudo, G
Citation: M. Fadlallah et al., Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics, MICROEL REL, 41(9-10), 2001, pp. 1361-1366
Authors:
Monsieur, F
Vincent, E
Pananakakis, G
Ghibaudo, G
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