Authors:
Lim, HS
Kang, SB
Jeon, IS
Choi, GH
Park, YW
Lee, SI
Moon, JT
Citation: Hs. Lim et al., Atomic layer deposition- and chemical vapor deposition-TiN top electrode optimization for the reliability of Ta2O5 and Al2O3 metal insulator silicon capacitor for 0.13 mu m technology and beyond, JPN J A P 1, 40(4B), 2001, pp. 2669-2673
Citation: Hh. Doh et al., Surface analysis for selective SiO2 etching by reflectance photoelastic modulated fourier transform infrared spectroscopy, JPN J A P 1, 40(10), 2001, pp. 6109-6114
Authors:
Kim, J
Shin, KS
Park, WJ
Kim, YJ
Kang, CJ
Ahn, TH
Moon, JT
Citation: J. Kim et al., Aspect ratio dependent plasma-induced charging damage in rf precleaning ofa metal contact, J VAC SCI A, 19(4), 2001, pp. 1835-1839
Authors:
Kim, YP
Jin, BJ
Park, YW
Moon, JT
Kim, SU
Citation: Yp. Kim et al., Analysis of retention tail distribution induced by scaled shallow trench isolation for high density DRAMs, MICROEL REL, 41(9-10), 2001, pp. 1301-1305
Authors:
Lee, JH
Park, D
Moon, JT
Lee, YH
Shin, DH
Kim, YS
Citation: Jh. Lee et al., Characteristics of the Sn-Pb eutectic solder bump formed via fluxless laser reflow soldering, J ELEC MAT, 29(10), 2000, pp. 1153-1159
Authors:
Yoon, SW
Park, CJ
Hong, SH
Moon, JT
Park, IS
Chun, HS
Citation: Sw. Yoon et al., Interfacial reaction and solder joint reliability of Pb-free solders in lead frame chip scale packages (LF-CSP), J ELEC MAT, 29(10), 2000, pp. 1233-1240
Citation: Jh. Kim et al., Characteristics of self bias voltage and poly-Si etching in pulsed heliconwave plasma, THIN SOL FI, 345(1), 1999, pp. 124-129
Citation: Jb. Kim et al., Poly (2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl methacrylate) for ArF lithography, POLYMER, 40(18), 1999, pp. 5213-5217