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Results:
1-13
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Results: 13
Authors:
Eymery, J
Rieutord, F
Fournel, F
Buttard, D
Moriceau, H
Citation: J. Eymery et al., X-ray reflectivity of silicon on insulator wafers, MAT SC S PR, 4(1-3), 2001, pp. 31-33
Authors:
Rousseau, K
Rouviere, JL
Fournel, F
Moriceau, H
Citation: K. Rousseau et al., Structural characterization of ultra-thin (001) silicon films bonded onto (001) silicon wafers: a transmission electron microscopy study, MAT SC S PR, 4(1-3), 2001, pp. 101-104
Authors:
Calvo, V
Sotta, D
Ulmer, H
Hadji, E
Magnea, N
Dumont, F
Moriceau, H
Hernandez, C
Campidelli, Y
Citation: V. Calvo et al., Luminescence of silicon thin film and SiGe multiple quantum wells realizedon SOI, OPT MATER, 17(1-2), 2001, pp. 107-110
Authors:
Sotta, D
Calvo, V
Ulmer-Tuffigo, H
Magnea, N
Hadji, E
Fournel, F
Rouviere, JL
Jalabert, D
Moriceau, H
Aspar, B
Citation: D. Sotta et al., Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates, MAT SCI E B, 81(1-3), 2001, pp. 43-45
Authors:
Aspar, B
Moriceau, H
Jalaguier, E
Lagahe, C
Soubie, A
Biasse, B
Papon, AM
Claverie, A
Grisolia, J
Benassayag, G
Letertre, F
Rayssac, O
Barge, T
Maleville, C
Ghyselen, B
Citation: B. Aspar et al., The generic nature of the Smart-Cut((R)) process for thin film transfer, J ELEC MAT, 30(7), 2001, pp. 834-840
Authors:
Rieutord, F
Eymery, J
Fournel, F
Buttard, D
Oeser, R
Plantevin, O
Moriceau, H
Aspar, B
Citation: F. Rieutord et al., High-energy x-ray reflectivity of buried interfaces created by wafer bonding - art. no. 125408, PHYS REV B, 6312(12), 2001, pp. 5408
Authors:
Rieutord, F
Rayssac, O
Moriceau, H
Citation: F. Rieutord et al., Spreading dynamics of water droplets, PHYS REV E, 62(5), 2000, pp. 6861-6864
Authors:
Fournel, F
Moriceau, H
Magnea, N
Eymery, J
Rouviere, JL
Rousseau, K
Aspar, B
Citation: F. Fournel et al., Ultra thin silicon films directly bonded onto silicon wafers, MAT SCI E B, 73(1-3), 2000, pp. 42-46
Authors:
Buttard, D
Eymery, J
Rieutord, F
Fournel, F
Lubbert, D
Baumbach, T
Moriceau, H
Citation: D. Buttard et al., Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces, PHYSICA B, 283(1-3), 2000, pp. 103-107
Authors:
Fournel, F
Moriceau, H
Magnea, N
Eymery, J
Buttard, D
Rouviere, JL
Rousseau, K
Aspar, B
Citation: F. Fournel et al., Nanometric patterning with ultrathin twist bonded silicon wafers, THIN SOL FI, 380(1-2), 2000, pp. 10-14
Authors:
Rouviere, JL
Rousseau, K
Fournel, F
Moriceau, H
Citation: Jl. Rouviere et al., Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers, APPL PHYS L, 77(8), 2000, pp. 1135-1137
Authors:
Aspar, B
Jalaguier, E
Mas, A
Locatelli, C
Rayssac, O
Moriceau, H
Pocas, S
Papon, AM
Michaud, JF
Bruel, M
Citation: B. Aspar et al., Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films, ELECTR LETT, 35(12), 1999, pp. 1024-1025
Authors:
Eymery, J
Fournel, F
Rieutord, F
Buttard, D
Moriceau, H
Aspar, B
Citation: J. Eymery et al., X-ray reflectivity of ultrathin twist-bonded silicon wafers, APPL PHYS L, 75(22), 1999, pp. 3509-3511
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