AAAAAA
Results: 1-25/48
Authors:
Mohammad, SN
Fan, ZF
Botchkarev, AE
Kim, W
Aktas, O
Morkoc, H
Shiwei, F
Jones, KA
Derenge, MA
Citation: Sn. Mohammad et al., Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes, PHIL MAG B, 81(5), 2001, pp. 453-460
Authors:
Visconti, P
Reshchikov, MA
Jones, KM
Wang, DF
Cingolani, R
Morkoc, H
Molnar, RJ
Smith, DJ
Citation: P. Visconti et al., Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication, J VAC SCI B, 19(4), 2001, pp. 1328-1333
Authors:
Morkoc, H
Citation: H. Morkoc, III-Nitride semiconductor growth by MBE: Recent issues, J MAT S-M E, 12(12), 2001, pp. 677-695
Authors:
Morkoc, H
Citation: H. Morkoc, Comprehensive characterization of hydride VPE grown GaN layers and templates, MAT SCI E R, 33(5-6), 2001, pp. 135-207
Authors:
Rinaldi, R
Cingolani, R
Jones, KM
Baski, AA
Morkoc, H
Di Carlo, A
Widany, J
Della Sala, E
Lugli, P
Citation: R. Rinaldi et al., Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction - art. no. 075311, PHYS REV B, 6307(7), 2001, pp. 5311
Authors:
Huang, D
Yun, F
Reshchikov, MA
Wang, D
Morkoc, H
Rode, DL
Farina, LA
Kurdak, C
Tsen, KT
Park, SS
Lee, KY
Citation: D. Huang et al., Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy, SOL ST ELEC, 45(5), 2001, pp. 711-715
Authors:
Sacconi, F
Di Carlo, A
Lugli, P
Morkoc, H
Citation: F. Sacconi et al., Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs, IEEE DEVICE, 48(3), 2001, pp. 450-457
Authors:
Reshchikov, MA
Huang, D
Yun, F
He, L
Morkoc, H
Reynolds, DC
Park, SS
Lee, KY
Citation: Ma. Reshchikov et al., Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template, APPL PHYS L, 79(23), 2001, pp. 3779-3781
Authors:
Huang, D
Visconti, P
Jones, KM
Reshchikov, MA
Yun, F
Baski, AA
King, T
Morkoc, H
Citation: D. Huang et al., Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4145-4147
Authors:
Reshchikov, MA
Morkoc, H
Park, SS
Lee, KY
Citation: Ma. Reshchikov et al., Yellow and green luminescence in a freestanding GaN template, APPL PHYS L, 78(20), 2001, pp. 3041-3043
Authors:
Reshchikov, MA
Visconti, P
Morkoc, H
Citation: Ma. Reshchikov et al., Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy, APPL PHYS L, 78(2), 2001, pp. 177-179
Authors:
Reshchikov, MA
Morkoc, H
Park, SS
Lee, KY
Citation: Ma. Reshchikov et al., Transient photoluminescence of defect transitions in freestanding GaN, APPL PHYS L, 78(19), 2001, pp. 2882-2884
Authors:
Jones, KM
Visconti, P
Yun, F
Baski, AA
Morkoc, H
Citation: Km. Jones et al., Investigation of inversion domains in GaN by electric-force microscopy, APPL PHYS L, 78(17), 2001, pp. 2497-2499
Authors:
Jasinski, J
Swider, W
Liliental-Weber, Z
Visconti, P
Jones, KM
Reshchikov, MA
Yun, F
Morkoc, H
Park, SS
Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Authors:
Fang, ZQ
Look, DC
Visconti, P
Wang, DF
Lu, CZ
Yun, F
Morkoc, H
Park, SS
Lee, KY
Citation: Zq. Fang et al., Deep centers in a free-standing GaN layer, APPL PHYS L, 78(15), 2001, pp. 2178-2180
Authors:
Gil, B
Lefebvre, P
Morkoc, H
Citation: B. Gil et al., Strain effects in GaN epilayers, CR AC S IV, 1(1), 2000, pp. 51-60
Authors:
Potin, V
Ruterana, P
Nouet, G
Pond, RC
Morkoc, H
Citation: V. Potin et al., Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle tohigh-angle grain boundaries, PHYS REV B, 61(8), 2000, pp. 5587-5599
Authors:
Cingolani, R
Botchkarev, A
Tang, H
Morkoc, H
Traetta, G
Coli, G
Lomascolo, M
Di Carlo, A
Della Sala, F
Lugli, P
Citation: R. Cingolani et al., Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: Impact on the optical spectra, PHYS REV B, 61(4), 2000, pp. 2711-2715
Authors:
Cui, J
Sun, A
Reshichkov, M
Yun, F
Baski, A
Morkoc, H
Citation: J. Cui et al., Preparation of sapphire for high quality III-nitride growth, MRS I J N S, 5(7), 2000, pp. 1-6
Authors:
Fang, ZQ
Look, DC
Kim, W
Morkoc, H
Citation: Zq. Fang et al., Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_810-NIL_815
Authors:
Bonfiglio, A
Lomascolo, M
Traetta, G
Cingolani, R
Di Carlo, A
Della Sala, F
Lugli, P
Botchkarev, A
Morkoc, H
Citation: A. Bonfiglio et al., Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells, MRS I J N S, 5, 2000, pp. NIL_834-NIL_839
Authors:
Fang, ZQ
Look, DC
Lu, C
Morkoc, H
Citation: Zq. Fang et al., Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy, J ELEC MAT, 29(9), 2000, pp. L19-L23
Authors:
Yun, F
Reshchikov, MA
Jones, K
Visconti, P
Morkoc, H
Park, SS
Lee, KY
Citation: F. Yun et al., Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2225-2232
Authors:
Lomascolo, M
Traetta, G
Passaseo, A
Longo, M
Cannoletta, D
Cingolani, R
Bonfiglio, A
Della Sala, F
Di Carlo, A
Lugli, P
Natali, M
Sinha, SK
Berti, M
Drigo, AV
Botchkarev, H
Morkoc, H
Citation: M. Lomascolo et al., Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells, PHYS ST S-A, 178(1), 2000, pp. 73-78
Authors:
Bonfiglio, A
Lomascolo, M
Traetta, G
Cingolani, R
Di Carlo, A
Della Sala, F
Lugli, P
Botchkarev, A
Morkoc, H
Citation: A. Bonfiglio et al., Well-width dependence of the ground level emission of GaN/AlGaN quantum wells, J APPL PHYS, 87(5), 2000, pp. 2289-2292