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Results: 1-9 |
Results: 9
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
Authors: Pichon, L Mourgues, K Raoult, F Mohammed-Brahim, T Kis-Sion, K Briand, D Bonnaud, O
Citation: L. Pichon et al., Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization, SEMIC SCI T, 16(11), 2001, pp. 918-924
High mobility thin film transistors by Nd : YVO4-laser crystallization
Authors: Helen, Y Dassow, R Nerding, M Mourgues, K Raoult, F Kohler, JR Mohammed-Brahim, T Rogel, R Bonnaud, O Werner, JH Strunk, HP
Citation: Y. Helen et al., High mobility thin film transistors by Nd : YVO4-laser crystallization, THIN SOL FI, 383(1-2), 2001, pp. 143-146
Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Authors: Toutah, H Tala-Ighil, B Llibre, JF Rahal, A Mourgues, K Helen, Y Brahim, TM Dassow, R Kohler, JR
Citation: H. Toutah et al., Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material, THIN SOL FI, 383(1-2), 2001, pp. 299-302
Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise
Authors: Mercha, A Pichon, L Carin, R Mourgues, K Bonnaud, O
Citation: A. Mercha et al., Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise, THIN SOL FI, 383(1-2), 2001, pp. 303-306
Laser crystallization of silicon for high-performance thin-film transistors
Authors: Dassow, R Kohler, JR Helen, Y Mourgues, K Bonnaud, O Mohammed-Brahim, T Werner, JH
Citation: R. Dassow et al., Laser crystallization of silicon for high-performance thin-film transistors, SEMIC SCI T, 15(10), 2000, pp. L31-L34
Stability of polysilicon thin film transistors under switch operating
Authors: Toutah, H Llibre, JF Tala-Ighil, B Mohammed-Brahim, T Mourgues, K Helen, Y Raoult, F Bonnaud, O
Citation: H. Toutah et al., Stability of polysilicon thin film transistors under switch operating, MICROEL REL, 40(8-10), 2000, pp. 1573-1577
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
Authors: Mourgues, K Rahal, A Mohammed-Brahim, T Sarret, M Kleider, JP Longeaud, C Bachrouri, A Romano-Rodriguez, A
Citation: K. Mourgues et al., Density of states in the channel material of low temperature polycrystalline silicon thin film transistors, J NON-CRYST, 266, 2000, pp. 1279-1283
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
Authors: Tala-Ighil, B Rahal, A Mourgues, K Toutah, A Pichon, L Mohammed-Brahim, T Raoult, F Bonnaud, O
Citation: B. Tala-ighil et al., State creation induced by gate bias stress in unhydrogenated polysilicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 101-104
Single shot excimer laser crystallization and LPCVD silicon TFTs
Authors: Helen, Y Mourgues, K Raoult, F Mohammed-Brahim, T Bonnaud, O Rogel, R Prochasson, S Boher, P Zahorski, D
Citation: Y. Helen et al., Single shot excimer laser crystallization and LPCVD silicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 133-136
Risultati: 1-9 |