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Results:
1-7
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Results: 7
Authors:
Mao, LF
Zhang, HQ
Wei, JL
Mu, FC
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(7), 2001, pp. 1081-1084
Authors:
Zhang, WR
Li, ZG
Mu, FC
Sun, YH
Cheng, YH
Chen, JX
Shen, GD
Citation: Wr. Zhang et al., Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers, SOL ST ELEC, 45(7), 2001, pp. 1183-1187
Authors:
Mu, FC
Mao, LF
Wei, JL
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode, SOL ST ELEC, 45(3), 2001, pp. 385-389
Authors:
Mu, FC
Xu, MZ
Tan, CH
Citation: Fc. Mu et al., A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes, SOL ST ELEC, 45(3), 2001, pp. 435-439
Authors:
Mu, FC
Xu, MZ
Tan, CH
Duan, XR
Citation: Fc. Mu et al., A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d, MICROEL REL, 41(11), 2001, pp. 1909-1913
Authors:
Mu, FC
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions, MICROEL REL, 41(1), 2001, pp. 129-131
Authors:
Mu, FC
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown, SOL ST ELEC, 44(8), 2000, pp. 1419-1424
Risultati:
1-7
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