Authors:
Nishinohara, KT
Akasaka, Y
Saito, T
Yagishita, A
Murakoshi, A
Suguro, K
Arikado, T
Citation: Kt. Nishinohara et al., Surface channel metal gate complementary MOS with light counter doping andsingle work function gate electrode, JPN J A P 1, 40(4B), 2001, pp. 2603-2606
Authors:
Sugizaki, T
Murakoshi, A
Ozawa, Y
Nakanishi, T
Suguro, K
Citation: T. Sugizaki et al., Dual-thickness gate oxidation technology with halogen/xenon implantation for embedded dynamic random access memories, JPN J A P 1, 40(4B), 2001, pp. 2674-2678
Authors:
Ohuchi, K
Adachi, K
Murakoshi, A
Hokazono, A
Kanemura, T
Aoki, N
Nishigohri, M
Suguro, K
Toyoshima, Y
Citation: K. Ohuchi et al., Ultrashallow junction formation for sub-100 nm complementary metal-oxide-semiconductor field-effect transistor by controlling transient enhanced diffusion, JPN J A P 1, 40(4B), 2001, pp. 2701-2705
Authors:
Ohuchi, K
Miyashita, K
Murakoshi, A
Yoshimura, Z
Suguro, K
Toyoshima, Y
Citation: K. Ohuchi et al., Improved Ti self-aligned silicide technology using high dose Ge pre-amorphization for 0.10 mu m CMOS and beyond, JPN J A P 1, 38(4B), 1999, pp. 2238-2242
Authors:
Inaba, S
Murakoshi, A
Tanaka, M
Yoshimura, H
Matsuoka, F
Toyoshima, Y
Citation: S. Inaba et al., Increase of parasitic resistance in shallow p(+) extension by SiN sidewallprocess and its improvement by Ge preamorphization for sub-0.25-mu m pMOSFET's, IEEE DEVICE, 46(6), 1999, pp. 1218-1224