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1-9
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Results: 9
Epitaxial growth of praseodymium oxide on silicon
Authors:
Osten, HJ Liu, JP Bugiel, E Mussig, HJ Zaumseil, P
Citation:
Hj. Osten et al., Epitaxial growth of praseodymium oxide on silicon, MAT SCI E B, 87(3), 2001, pp. 297-302
Can Si(113) wafers be an alternative to Si(001)?
Authors:
Mussig, HJ Dabrowski, J Ehwald, KE Gaworzewski, P Huber, A Lambert, U
Citation:
Hj. Mussig et al., Can Si(113) wafers be an alternative to Si(001)?, MICROEL ENG, 56(1-2), 2001, pp. 195-203
Formation of atomically smooth, ultrathin oxides on Si(113)
Authors:
Mussig, HJ Dabrowski, J Hinrich, S
Citation:
Hj. Mussig et al., Formation of atomically smooth, ultrathin oxides on Si(113), SOL ST ELEC, 45(8), 2001, pp. 1219-1231
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide
Authors:
Osten, HJ Liu, JP Mussig, HJ Zaumseil, P
Citation:
Hj. Osten et al., Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide, MICROEL REL, 41(7), 2001, pp. 991-994
Segregation of phosphorus to SiO2/Si(001) interfaces
Authors:
Dabrowski, J Mussig, HJ Baierle, R Caldas, MJ Zavodinsky, V
Citation:
J. Dabrowski et al., Segregation of phosphorus to SiO2/Si(001) interfaces, MAT SC S PR, 3(1-2), 2000, pp. 85-89
Mechanism of dopant segregation to SiO2/Si(001) interfaces
Authors:
Dabrowski, J Casali, RA Mussig, HJ Baierle, R Caldas, MJ Zavodinsky, V
Citation:
J. Dabrowski et al., Mechanism of dopant segregation to SiO2/Si(001) interfaces, J VAC SCI B, 18(4), 2000, pp. 2160-2164
Cross-sectional STM/STS - a useful tool for identification of dopants in silicon
Authors:
Nuffer, R Mussig, HJ Dabrowski, J
Citation:
R. Nuffer et al., Cross-sectional STM/STS - a useful tool for identification of dopants in silicon, SOL ST ELEC, 44(5), 2000, pp. 875-880
Atomically smooth ultrathin oxide on Si(113)
Authors:
Mussig, HJ Dabrowski, J Hinrich, S
Citation:
Hj. Mussig et al., Atomically smooth ultrathin oxide on Si(113), MICROEL REL, 40(4-5), 2000, pp. 577-579
A unified microscopic mechanism for donor deactivation in Si
Authors:
Baierle, R Caldas, MJ Dabrowski, J Mussig, HJ Zavodinsky, V
Citation:
R. Baierle et al., A unified microscopic mechanism for donor deactivation in Si, PHYSICA B, 274, 1999, pp. 260-263
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1-9
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