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Results: 1-10 |
Results: 10
Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation
Authors: Goodman, SA Auret, FD Myburg, G Legodi, MJ Gibart, P Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Processing-induced electron traps in n-type GaN
Authors: Auret, FD Goodman, SA Myburg, G Mohney, SE de Lucca, JM
Citation: Fd. Auret et al., Processing-induced electron traps in n-type GaN, MAT SCI E B, 82(1-3), 2001, pp. 102-104
Accumulation of radioactive corrosion products on steel surfaces of VVER-type nuclear reactors. II. Co-60
Authors: Varga, K Hirschberg, G Nemeth, Z Myburg, G Schunk, J Tilky, P
Citation: K. Varga et al., Accumulation of radioactive corrosion products on steel surfaces of VVER-type nuclear reactors. II. Co-60, J NUCL MAT, 298(3), 2001, pp. 231-238
Accumulation of radioactive corrosion products on steel surfaces of VVER type nuclear reactors. Part I. Ag-110m contamination
Authors: Hirschberg, G Baradlai, P Varga, K Myburg, G Schunk, J Tilky, P Stoddart, P
Citation: G. Hirschberg et al., Accumulation of radioactive corrosion products on steel surfaces of VVER type nuclear reactors. Part I. Ag-110m contamination, MAGY KEM FO, 105(4), 1999, pp. 128-137
Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
Authors: Auret, FD Goodman, SA Myburg, G Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts, PHYSICA B, 274, 1999, pp. 84-87
Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma
Authors: Mamor, M Auret, FD Willander, M Goodman, SA Myburg, G Meyer, F
Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614
Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma
Authors: Deenapanray, PNK Auret, FD Myburg, G
Citation: Pnk. Deenapanray et al., Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma, NUCL INST B, 148(1-4), 1999, pp. 300-305
Proton irradiation of n-type GaAs
Authors: Goodman, SA Auret, FD Ridgway, M Myburg, G
Citation: Sa. Goodman et al., Proton irradiation of n-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 446-449
Accumulation of radioactive corrosion products on steel surfaces of VVER type nuclear reactors. I. Ag-110m
Authors: Hirschberg, G Baradlai, P Varga, K Myburg, G Schunk, J Tilky, P Stoddart, P
Citation: G. Hirschberg et al., Accumulation of radioactive corrosion products on steel surfaces of VVER type nuclear reactors. I. Ag-110m, J NUCL MAT, 265(3), 1999, pp. 273-284
Fermi level pinning by metal Schottky contacts on n type GaAs
Authors: Myburg, G Meyer, WE Auret, FD Burger, H Barnard, WO Goodman, SA
Citation: G. Myburg et al., Fermi level pinning by metal Schottky contacts on n type GaAs, MATER SCI T, 14(12), 1998, pp. 1269-1272
Risultati: 1-10 |