Citation: Br. Nag, AN EMPIRICAL RELATION BETWEEN THE MELTING-POINT AND THE DIRECT BANDGAP OF SEMICONDUCTING COMPOUNDS, Journal of electronic materials, 26(2), 1997, pp. 70-72
Citation: S. Gangopadhyay et Br. Nag, ENERGY-LEVELS IN FINITE BARRIER TRIANGULAR AND ARROWHEAD-SHAPED QUANTUM WIRES, Journal of applied physics, 81(12), 1997, pp. 7885-7889
Citation: S. Gangopadhyay et Br. Nag, ENERGY EIGENVALUES IN SQUARE AND RECTANGULAR QUANTUM WIRES WITH FINITE BARRIER POTENTIAL, Physica status solidi. b, Basic research, 195(1), 1996, pp. 123-128
Citation: Br. Nag et S. Gangopadhyay, ELECTRON-MOBILITY LIMITED BY DEFORMATION POTENTIAL ACOUSTIC-PHONON SCATTERING IN QUANTUM WIRES, Semiconductor science and technology, 10(6), 1995, pp. 813-817
Citation: Br. Nag et S. Gangopadhyay, ENERGY-LEVELS IN QUANTUM WIRES WITH FINITE BARRIER POTENTIAL, Physica status solidi. b, Basic research, 179(2), 1993, pp. 463-471
Citation: Br. Nag et S. Mukhopadhyay, INPLANE EFFECTIVE-MASS IN NARROW QUANTUM-WELLS OF NONPARABOLIC SEMICONDUCTORS, Applied physics letters, 62(19), 1993, pp. 2416-2418
Citation: D. Bose et Br. Nag, ELECTRON VELOCITY IN INDIUM-PHOSPHIDE SINGLE-HETEROJUNCTION QUANTUM-WELLS, Semiconductor science and technology, 6(12), 1991, pp. 1135-1140