AAAAAA
Results:
1-20
|
Results: 20
Authors:
SONG SH
KIM DM
KIM HJ
KIM SH
KANG KN
NATHAN MI
Citation: Sh. Song et al., PHOTONIC MICROWAVE CHARACTERISTICS AND MODELING OF AN AL0.3GA0.7AS GAAS/IN0.13GA0.87AS DOUBLE-HETEROSTRUCTURE PSEUDOMORPHIC HEMT/, IEEE microwave and guided wave letters, 8(1), 1998, pp. 35-37
Authors:
FUNG AK
ALBRECHT JD
NATHAN MI
RUDEN PP
SHTRIKMAN H
Citation: Ak. Fung et al., INPLANE UNIAXIAL-STRESS EFFECTS OF ALGAAS GAAS MODULATION-DOPED HETEROSTRUCTURES CHARACTERIZED BY THE TRANSMISSION-LINE METHOD/, Journal of applied physics, 84(7), 1998, pp. 3741-3746
Authors:
CAI C
NATHAN MI
RUBINI S
SORBA L
MUELLER B
PELUCCHI E
FRANCIOSI A
Citation: C. Cai et al., ELECTRICAL-PROPERTIES OF N-N ZNSE IN0.04GA0.96AS(001) HETEROJUNCTIONS/, Applied physics letters, 73(14), 1998, pp. 2033-2035
Authors:
CHEN CJ
LIEN A
NATHAN MI
Citation: Cj. Chen et al., 4 X 4 AND 2 X-2 MATRIX FORMULATIONS FOR THE OPTICS IN STRATIFIED AND BIAXIAL MEDIA, Journal of the Optical Society of America. A, Optics, image science,and vision., 14(11), 1997, pp. 3125-3134
Authors:
NATHAN MI
Citation: Mi. Nathan, THE BLUE LASER-DIODE - GAN BASED LIGHT EMITTERS AND LASERS - NAKAMURA,S, FASOL,G, Science, 277(5322), 1997, pp. 46-47
Authors:
CHEN CJ
LIEN A
NATHAN MI
Citation: Cj. Chen et al., SIMPLE METHOD FOR THE CALCULATION OF THE DEFORMATION PROFILES IN CHIRAL NEMATIC LIQUID-CRYSTAL CELLS WITH ASYMMETRIC PRETILT, Journal of applied physics, 81(1), 1997, pp. 70-73
Authors:
FUNG AK
CONG L
ALBRECHT JD
NATHAN MI
RUDEN PP
SHTRIKMAN H
Citation: Ak. Fung et al., LINEAR INPLANE UNIAXIAL-STRESS EFFECTS ON THE DEVICE CHARACTERISTICS OF ALGAAS GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(1), 1997, pp. 502-505
Authors:
CHEN P
BLAKE GA
GAIDIS MC
BROWN ER
MCINTOSH KA
CHOU SY
NATHAN MI
WILIAMSON F
Citation: P. Chen et al., SPECTROSCOPIC APPLICATIONS AND FREQUENCY LOCKING OF THZ PHOTOMIXING WITH DISTRIBUTED-BRAGG-REFLECTOR DIODE-LASERS IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 71(12), 1997, pp. 1601-1603
Authors:
CHEN CJ
LIEN A
NATHAN MI
Citation: Cj. Chen et al., 4X4 MATRIX-METHOD FOR BIAXIAL MEDIA AND ITS APPLICATION TO LIQUID-CRYSTAL DISPLAYS, JPN J A P 2, 35(9B), 1996, pp. 1204-1207
Authors:
CONG L
ALBRECHT JD
COHEN D
RUDEN PP
NATHAN MI
Citation: L. Cong et al., GROWTH OF (111)B-ORIENTED RESONANT-TUNNELING DEVICES IN A GAS-SOURCE MOLECULAR-BEAM EPITAXY SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 924-927
Authors:
CONG L
WILLIAMSON F
NATHAN MI
Citation: L. Cong et al., (111)B-ORIENTED ALAS GAAS/ALAS DOUBLE-BARRIER RESONANT-TUNNELING DEVICES GROWN IN A GAS-SOURCE MOLECULAR-BEAM EPITAXY SYSTEM/, Journal of electronic materials, 25(2), 1996, pp. 305-308
Authors:
ALBRECHT JD
CONG L
RUDEN PP
NATHAN MI
SMITH DL
Citation: Jd. Albrecht et al., RESONANT-TUNNELING IN (001)-ORIENTED AND (111)-ORIENTED III-V DOUBLE-BARRIER HETEROSTRUCTURES UNDER TRANSVERSE AND LONGITUDINAL STRESSES, Journal of applied physics, 79(10), 1996, pp. 7763-7769
Authors:
CONG L
ALBRECHT JD
NATHAN MI
RUDEN PP
Citation: L. Cong et al., PIEZOELECTRIC EFFECT IN (001)-ORIENTED AND (111)-ORIENTED DOUBLE-BARRIER RESONANT-TUNNELING DEVICES, Journal of applied physics, 79(10), 1996, pp. 7770-7774
Authors:
LIM TH
MILLER TJ
WILLIAMSON F
NATHAN MI
Citation: Th. Lim et al., CHARACTERIZATION OF INTERFACE CHARGE AT GA0.52IN0.48P GAAS JUNCTIONS USING CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE MEASUREMENTS/, Applied physics letters, 69(11), 1996, pp. 1599-1601
Authors:
WANG L
NATHAN MI
LIM TH
KHAN MA
CHEN Q
Citation: L. Wang et al., HIGH BARRIER HEIGHT GAN SCHOTTKY DIODES - PT GAN AND PD/GAN/, Applied physics letters, 68(9), 1996, pp. 1267-1269
Authors:
CONG L
ALBRECHT JD
NATHAN MI
RUDEN PP
SMITH DL
Citation: L. Cong et al., PIEZOELECTRIC EFFECTS IN (001)-ORIENTED DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES, Applied physics letters, 66(11), 1995, pp. 1358-1360
Authors:
CANTILE M
SORBA L
FARACI P
YILDIRIM S
BIASIOL G
BRATINA G
FRANCIOSI A
MILLER TJ
NATHAN MI
TAPFER L
Citation: M. Cantile et al., MODIFICATION OF AL GAAS(001) SCHOTTKY BARRIERS BY MEANS OF HETEROVALENT INTERFACE LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2653-2659
Authors:
MILLER TJ
BACKES GB
NATHAN MI
Citation: Tj. Miller et al., SCHOTTKY-BARRIER HEIGHT MODIFICATION ON N-TYPE AND P-TYPE GAINP WITH THIN INTERFACIAL SI, Journal of applied physics, 76(12), 1994, pp. 7931-7934
Authors:
MILLER TJ
NATHAN MI
Citation: Tj. Miller et Mi. Nathan, SCHOTTKY-BARRIER HEIGHT DEPENDENCE ON THE COMPENSATION DOPING IN THE INTERFACIAL SI LAYER OF AL SI/N-GAAS SCHOTTKY DIODES/, Journal of applied physics, 76(1), 1994, pp. 371-375
Authors:
CANTILE M
SORBA L
YILDIRIM S
FARACI P
BIASIOL G
FRANCIOSI A
MILLER TJ
NATHAN MI
Citation: M. Cantile et al., SILICON-INDUCED LOCAL INTERFACE DIPOLE IN AL GAAS(001) SCHOTTKY DIODES, Applied physics letters, 64(8), 1994, pp. 988-990
Risultati:
1-20
|