Authors: STRASS A HANSCH W BIERINGER P NEUBECKER A KAESEN F FISCHER A EISELE I

Citation: A. Strass et al., ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/, Surface & coatings technology, 97(1-3), 1997, pp. 158-162

Authors: STRASS A HANSCH W NEUBECKER A BIERINGER P FISCHER A EISELE I

Citation: A. Strass et al., SIO2 FILM GROWTH AT ROOM-TEMPERATURE BY PLASMA-ENHANCED EVAPORATION IN AN UHV CHAMBER, Vacuum, 48(7-9), 1997, pp. 701-704

Authors: NEUBECKER A POMPL T DOLL T HANSCH W EISELE I

Citation: A. Neubecker et al., OZONE-ENHANCED MOLECULAR-BEAM DEPOSITION OF NICKEL-OXIDE (NIO) FOR SENSOR APPLICATIONS, Thin solid films, 310(1-2), 1997, pp. 19-23

Authors: NEUBECKER A BIERINGER P HANSCH W EISELE I

Citation: A. Neubecker et al., PLASMA-ENHANCED EVAPORATION OF SIO2-FILMS FOR MBE-GROWN MOS DEVICES, Journal of crystal growth, 157(1-4), 1995, pp. 201-206