Authors: NG HM DOPPALAPUDI D KORAKAKIS D SINGH R MOUSTAKAS TD

Citation: Hm. Ng et al., MBE GROWTH AND DOPING OF III-V NITRIDES, Journal of crystal growth, 190, 1998, pp. 349-353

Authors: WEIMANN NG EASTMAN LF DOPPALAPUDI D NG HM MOUSTAKAS TD

Citation: Ng. Weimann et al., SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN, Journal of applied physics, 83(7), 1998, pp. 3656-3659

Authors: NG HM DOPPALAPUDI D MOUSTAKAS TD WEIMANN NG EASTMAN LF

Citation: Hm. Ng et al., THE ROLE OF DISLOCATION SCATTERING IN N-TYPE GAN FILMS, Applied physics letters, 73(6), 1998, pp. 821-823

Authors: ILIOPOULOS E DOPPALAPUDI D NG HM MOUSTAKAS TD

Citation: E. Iliopoulos et al., BROADENING OF NEAR-BAND-GAP PHOTOLUMINESCENCE IN N-GAN FILMS, Applied physics letters, 73(3), 1998, pp. 375-377

Authors: TORVIK JT PANKOVE JI ILIOPOULOS E NG HM MOUSTAKAS TD

Citation: Jt. Torvik et al., OPTICAL-PROPERTIES OF GAN GROWN OVER SIO2 ON SIC SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(2), 1998, pp. 244-245

Authors: TORVIK JT LEKSONO M PANKOVE JI VANZEGHBROECK B NG HM MOUSTAKAS TD

Citation: Jt. Torvik et al., ELECTRICAL CHARACTERIZATION OF GAN SIC N-P HETEROJUNCTION DIODES/, Applied physics letters, 72(11), 1998, pp. 1371-1373