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Results: 1-25/59
Authors:
GRETILLAT MA
LINDER C
DOMMANN A
STAUFERT G
DEROOIJ NF
NICOLET MA
Citation: Ma. Gretillat et al., SURFACE-MICROMACHINED TA-SI-N BEAMS FOR USE IN MICROMECHANICS, Journal of micromechanics and microengineering, 8(2), 1998, pp. 88-90
Authors:
BACHLI A
NICOLET MA
BAUD L
JAUSSAUD C
MADAR R
Citation: A. Bachli et al., NICKEL FILM ON (001)SIC - THERMALLY-INDUCED REACTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 11-23
Authors:
FLEMING JG
ROHERTYOSMUN E
SMITH PM
CUSTER JS
KIM YD
KACSICH T
NICOLET MA
GALEWSKI CJ
Citation: Jg. Fleming et al., GROWTH AND PROPERTIES OF W-SI-N DIFFUSION-BARRIERS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 320(1), 1998, pp. 10-14
Authors:
KACSICH T
KOLAWA E
FLEURIAL JP
CAILLAT T
NICOLET MA
Citation: T. Kacsich et al., FILMS OF NI-7 AT-PERCENT V, PD, PT AND TA-SI-N AS DIFFUSION-BARRIERS FOR COPPER ON BI2TE3, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2406-2411
Authors:
SUN X
KOLAWA E
IM S
GARLAND C
NICOLET MA
Citation: X. Sun et al., EFFECT OF SI IN REACTIVELY SPUTTERED TI-SI-N FILMS ON STRUCTURE AND DIFFUSION BARRIER PERFORMANCE, Applied physics A: Materials science & processing, 65(1), 1997, pp. 43-45
Authors:
LINDER C
DOMMANN A
STAUFERT G
NICOLET MA
Citation: C. Linder et al., TERNARY TA-SI-N FILMS FOR SENSORS AND ACTUATORS, Sensors and actuators. A, Physical, 61(1-3), 1997, pp. 387-391
Authors:
GASSER SM
BACHLI A
GARLAND CM
KOLAWA E
NICOLET MA
Citation: Sm. Gasser et al., REACTION OF THIN NI FILMS WITH (001) 3C-SIC AT 700-DEGREES-C, Microelectronic engineering, 37-8(1-4), 1997, pp. 529-534
Authors:
IM S
EISEN F
NICOLET MA
TANNER MO
WANG KL
THEODORE ND
Citation: S. Im et al., STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION, Journal of applied physics, 81(4), 1997, pp. 1695-1699
Authors:
IM S
SONG JH
LIE DYC
EISEN F
ATWATER H
NICOLET MA
Citation: S. Im et al., SIGEC ALLOY LAYER FORMATION BY HIGH-DOSE C+ IMPLANTATIONS INTO PSEUDOMORPHIC METASTABLE GE0.08SI0.92 ON SI(100), Journal of applied physics, 81(4), 1997, pp. 1700-1703
Authors:
SUN X
REID JS
KOLAWA E
NICOLET MA
Citation: X. Sun et al., REACTIVELY SPUTTERED TI-SI-N FILMS .1. PHYSICAL-PROPERTIES, Journal of applied physics, 81(2), 1997, pp. 656-663
Authors:
SUN X
REID JS
KOLAWA E
NICOLET MA
RUIZ RP
Citation: X. Sun et al., REACTIVELY SPUTTERED TI-SI-N FILMS .2. DIFFUSION-BARRIERS FOR AL AND CU METALLIZATIONS ON SI, Journal of applied physics, 81(2), 1997, pp. 664-671
Authors:
VINH LT
EDDRIEF M
MAHAN JE
VANTOMME A
SONG JH
NICOLET MA
Citation: Lt. Vinh et al., THE VAN-DER-WAALS EPITAXIAL-GROWTH OF GASE ON SI(111), Journal of applied physics, 81(11), 1997, pp. 7289-7294
Authors:
SUN X
SCHNEIDER S
GEYER U
JOHNSON WL
NICOLET MA
Citation: X. Sun et al., OXIDATION AND CRYSTALLIZATION OF AN AMORPHOUS ZR60AL15NI25 ALLOY, Journal of materials research, 11(11), 1996, pp. 2738-2743
Authors:
LIE DYC
SONG JH
EISEN F
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., STRAIN EVOLUTION AND DOPANT ACTIVATION IN P-IMPLANTED METASTABLE PSEUDOMORPHIC SI(100) G(0.12)SI(0.88)/, Journal of electronic materials, 25(1), 1996, pp. 87-92
Authors:
PAN ETS
NICOLET MA
Citation: Ets. Pan et Ma. Nicolet, LANGMUIR-BLODGETT-FILMS IN METAL-SILICON CONTACTS, Materials chemistry and physics, 46(2-3), 1996, pp. 269-273
Authors:
SHALISH I
GASSER SM
KOLAWA E
NICOLET MA
RUIZ RP
Citation: I. Shalish et al., GOLD METALLIZATION FOR ALUMINUM NITRIDE, Thin solid films, 289(1-2), 1996, pp. 166-169
Authors:
KUBOTA H
EASTERBROOK M
TOKUNAGA M
SAKATA I
NAGATA M
NICOLET MA
Citation: H. Kubota et al., MODEL OF OXIDATION OF TIN IN ION-BEAM-ASSISTED DEPOSITION PROCESS, Thin solid films, 282(1-2), 1996, pp. 108-111
Authors:
IM S
LIE DYC
NICOLET MA
Citation: S. Im et al., ADVANTAGE OF SHORT OVER LONG ANNEALING TO ACTIVATE AS IMPLANTED IN METASTABLE PSEUDOMORPHIC GE0.08SI0.92 LAYERS ON SI(100), Journal of applied physics, 79(9), 1996, pp. 7389-7391
Authors:
REID JS
KOLAWA E
GARLAND CM
NICOLET MA
CARDONE F
GUPTA D
RUIZ RP
Citation: Js. Reid et al., AMORPHOUS (MO, TA, OR W)-SI-N DIFFUSION-BARRIERS FOR AL METALLIZATIONS, Journal of applied physics, 79(2), 1996, pp. 1109-1115
Authors:
LIE DYC
IM S
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., SHORT AND LONG ANNEALING OF HIGH-DOSE ARSENIC-IMPLANTED PSEUDOMORPHICGEXSI1-X ON SI(100), Journal of applied physics, 79(11), 1996, pp. 8341-8348
Authors:
DAUKSHER WJ
RESNICK DJ
CUMMINGS KD
BAKER J
GREGORY RB
THEODORE ND
CHAN JA
JOHNSON WA
MOGAB CJ
NICOLET MA
REID JS
Citation: Wj. Dauksher et al., METHOD FOR FABRICATING A LOW-STRESS X-RAY MASK USING ANNEALABLE AMORPHOUS REFRACTORY COMPOUNDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3103-3108
Authors:
BAUD L
JAUSSAUD C
MADAR R
BERNARD C
CHEN JS
NICOLET MA
Citation: L. Baud et al., INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 126-130
Authors:
CHEN JS
BACHLI A
NICOLET MA
BAUD L
JAUSSAUD C
MADAR R
Citation: Js. Chen et al., CONTACT RESISTIVITY OF RE, PT AND TA FILMS ON N-TYPE BETA-SIC - PRELIMINARY-RESULTS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 185-189
Authors:
NICOLET MA
Citation: Ma. Nicolet, TERNARY AMORPHOUS METALLIC THIN-FILMS AS DIFFUSION-BARRIERS FOR CU METALLIZATION, Applied surface science, 91(1-4), 1995, pp. 269-276
Authors:
NICOLET MA
LIU WS
Citation: Ma. Nicolet et Ws. Liu, OXIDATION OF GESI, Microelectronic engineering, 28(1-4), 1995, pp. 185-191