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Results:
1-8
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Results: 8
Authors:
HOUSSA M
NIGAM T
MERTENS PW
HEYNS MM
Citation: M. Houssa et al., MODEL FOR THE CURRENT-VOLTAGE CHARACTERISTICS OF ULTRATHIN GATE OXIDES AFTER SOFT BREAKDOWN, Journal of applied physics, 84(8), 1998, pp. 4351-4355
Authors:
CRUPI F
DEGRAEVE R
GROESENEKEN G
NIGAM T
MAES HE
Citation: F. Crupi et al., ON THE PROPERTIES OF THE GATE AND SUBSTRATE CURRENT AFTER SOFT BREAKDOWN IN ULTRATHIN OXIDE LAYERS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2329-2334
Authors:
HOUSSA M
NIGAM T
MERTENS PW
HEYNS MM
Citation: M. Houssa et al., SOFT BREAKDOWN IN ULTRATHIN GATE OXIDES - CORRELATION WITH THE PERCOLATION THEORY OF NONLINEAR CONDUCTORS, Applied physics letters, 73(4), 1998, pp. 514-516
Authors:
DEPAS M
DEGRAEVE R
NIGAM T
GROESENEKEN G
HEYNS M
Citation: M. Depas et al., RELIABILITY OF ULTRA-THIN GATE OXIDE BELOW 3 NM IN THE DIRECT TUNNELING REGIME, JPN J A P 1, 36(3B), 1997, pp. 1602-1608
Authors:
DEPAS M
NIGAM T
HEYNS MM
Citation: M. Depas et al., DEFINITION OF DIELECTRIC-BREAKDOWN FOR ULTRA-THIN (LESS-THAN-2 NM) GATE OXIDES, Solid-state electronics, 41(5), 1997, pp. 725-728
Authors:
NIGAM T
CAMERON PM
LEVERETTE JS
Citation: T. Nigam et al., IMPASSES IN THE SUPERVISORY PROCESS - A RESIDENTS PERSPECTIVE, American journal of psychotherapy, 51(2), 1997, pp. 252-272
Authors:
DEPAS M
NIGAM T
HEYNS MM
Citation: M. Depas et al., SOFT BREAKDOWN OF ULTRA-THIN GATE OXIDE LAYERS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1499-1504
Authors:
NIGAM T
Citation: T. Nigam, GRIEVING MENTAL-ILLNESS - A GUIDE FOR PATIENTS AND THEIR CAREGIVERS -LAFOND,V, Journal of psychiatry & neuroscience, 20(3), 1995, pp. 237-238
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