AAAAAA

   
Results: 1-13 |
Results: 13
GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS
Authors: NIKOLAEV AE RENDAKOVA SV NIKITINA IP VASSILEVSKI KV DMITRIEV VA
Citation: Ae. Nikolaev et al., GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS, Journal of electronic materials, 27(4), 1998, pp. 288-291
LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM
Authors: ZUBRILOV AS MELNIK YV TSVETKOV DV BUGROV VE NIKOLAEV AE STEPANOV SI DMITRIEV VA
Citation: As. Zubrilov et al., LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM, Semiconductors, 31(5), 1997, pp. 523-526
STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY
Authors: MELNIK YV NIKITINA IP NIKOLAEV AE DMITRIEV VA
Citation: Yv. Melnik et al., STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1532-1535
ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/
Authors: KUZNETSOV NI GUBENCO AE NIKOLAEV AE MELNIK YV BLASHENKOV MN NIKITINA IP DMITRIEV VA
Citation: Ni. Kuznetsov et al., ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 74-78
EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT REN GB ORTON JW MELNIK YV NIKITINA IP NIKOLAEV AE NOVIKOV SV DMITRIEV VA
Citation: Ts. Cheng et al., EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 917-920
DYNAMICS OF PROTON-CONTAINING GROUPS TANT ALUM HYDROGEN PHOSPHATE
Authors: YAROSLAVTSEV AB CHUVAEV VF ZONNTAG R NIKOLAEV AE
Citation: Ab. Yaroslavtsev et al., DYNAMICS OF PROTON-CONTAINING GROUPS TANT ALUM HYDROGEN PHOSPHATE, Zurnal neorganiceskoj himii, 42(1), 1997, pp. 29-34
ION-EXCHANGE IN ACID TANTALUM PHOSPHATE
Authors: YAROSLAVTSEV AB NIKOLAEV AE TARNOPOLSKY VA
Citation: Ab. Yaroslavtsev et al., ION-EXCHANGE IN ACID TANTALUM PHOSPHATE, Mendeleev communications, (2), 1996, pp. 56-57
PROTON MOBILITY IN HYDRATED NIOBIUM OXOPHOSPHATE
Authors: YAROSLAVTSEV AB NIKOLAEV AE CHUVAEV VF
Citation: Ab. Yaroslavtsev et al., PROTON MOBILITY IN HYDRATED NIOBIUM OXOPHOSPHATE, Zurnal neorganiceskoj himii, 41(8), 1996, pp. 1255-1258
PROTON MOBILITY AND THE STRUCTURE OF INDI UM HYDROGEN SELENITE TRIHYDRATE
Authors: YAROSLAVTSEV AB NIKOLAEV AE ILYUKHIN AB CHUVAEV VF
Citation: Ab. Yaroslavtsev et al., PROTON MOBILITY AND THE STRUCTURE OF INDI UM HYDROGEN SELENITE TRIHYDRATE, Zurnal neorganiceskoj himii, 41(10), 1996, pp. 1616-1620
SYNTHESIS AND PROTONIC CONDUCTIVITY OF TA NTALUM HYDROGEN PHOSPHATE
Authors: YAROSLAVTSEV AB NIKOLAEV AE CHUVAEV VF
Citation: Ab. Yaroslavtsev et al., SYNTHESIS AND PROTONIC CONDUCTIVITY OF TA NTALUM HYDROGEN PHOSPHATE, Zurnal neorganiceskoj himii, 41(1), 1996, pp. 29-32
SIC LIQUID-PHASE EPITAXY ON PATTERNED SUBSTRATES
Authors: NIKOLAEV AE IVANTSOV VA RENDAKOVA SV BLASHENKOV MN DMITRIEV VA
Citation: Ae. Nikolaev et al., SIC LIQUID-PHASE EPITAXY ON PATTERNED SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 607-611
SYNTHESIS AND PROTON CONDUCTIVITY OF ACID TANTALUM PHOSPHATE
Authors: YAROSLAVTSEV AB NIKOLAEV AE
Citation: Ab. Yaroslavtsev et Ae. Nikolaev, SYNTHESIS AND PROTON CONDUCTIVITY OF ACID TANTALUM PHOSPHATE, Mendeleev communications, (4), 1995, pp. 136-137
DEFORMATION OF NITROGEN-DOPED CUBIC POLYTYPE SIC
Authors: NIKITINA IP NIKOLAEV AE
Citation: Ip. Nikitina et Ae. Nikolaev, DEFORMATION OF NITROGEN-DOPED CUBIC POLYTYPE SIC, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 784-786
Risultati: 1-13 |