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Results: 1-15 |
Results: 15
TRANSFER IMPEDANCE CALCULATIONS OF ELECTRONIC NOISE IN 2-TERMINAL SEMICONDUCTOR STRUCTURES
Authors: STARIKOV E SHIKTOROV P GRUZINSKIS V VARANI L VAISSIERE JC NOUGIER JP GONZALEZ T MATEOS J PARDO D REGGIANI L
Citation: E. Starikov et al., TRANSFER IMPEDANCE CALCULATIONS OF ELECTRONIC NOISE IN 2-TERMINAL SEMICONDUCTOR STRUCTURES, Journal of applied physics, 83(4), 1998, pp. 2052-2066
TRANSIENT SOLUTION DETERMINATION OF THE BOLTZMANN-EQUATION USING A POLYNOMIAL EXPANSION
Authors: TABIKH S GONTRAND C NOUGIER JP
Citation: S. Tabikh et al., TRANSIENT SOLUTION DETERMINATION OF THE BOLTZMANN-EQUATION USING A POLYNOMIAL EXPANSION, Journal de physique. III, 7(2), 1997, pp. 281-289
A MICROSCOPIC ANALYSIS OF THE CARRIER-VELOCITY DISTRIBUTION AND THE NOISE IN FET DEVICES
Authors: HOULET P UENO H HAMAGUCHI C VAISSIERE JC NOUGIER JP VARANI L
Citation: P. Houlet et al., A MICROSCOPIC ANALYSIS OF THE CARRIER-VELOCITY DISTRIBUTION AND THE NOISE IN FET DEVICES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 470-472
HOT-CARRIER THERMAL-CONDUCTIVITY FROM THE SIMULATION OF SUBMICRON SEMICONDUCTOR STRUCTURES
Authors: GOLINELLI P BRUNETTI R VARANI L VAISSIERE JC NOUGIER JP REGGIANI L STARIKOV E SHIKTOROV P GRUZINSKIS V GONZALEZ T MARTIN MJ PARDO D
Citation: P. Golinelli et al., HOT-CARRIER THERMAL-CONDUCTIVITY FROM THE SIMULATION OF SUBMICRON SEMICONDUCTOR STRUCTURES, Semiconductor science and technology, 12(11), 1997, pp. 1511-1513
NONEQUILIBRIUM PHONON EFFECTS ON THE TRANSIENT HIGH-FIELD TRANSPORT REGIME IN INP
Authors: VAISSIERE JC NOUGIER JP VARANI L HOULET P HLOU L REGGIANI L KOCEVAR P
Citation: Jc. Vaissiere et al., NONEQUILIBRIUM PHONON EFFECTS ON THE TRANSIENT HIGH-FIELD TRANSPORT REGIME IN INP, Physical review. B, Condensed matter, 53(15), 1996, pp. 9886-9894
A MODEL NOISE TEMPERATURE FOR NONLINEAR TRANSPORT IN SEMICONDUCTORS
Authors: VARANI L HOULET P VAISSIERE JC NOUGIER JP STARIKOV E GRUZHINSKIS V SHIKTOROV P REGGIANI L HLOU L
Citation: L. Varani et al., A MODEL NOISE TEMPERATURE FOR NONLINEAR TRANSPORT IN SEMICONDUCTORS, Journal of applied physics, 80(9), 1996, pp. 5067-5075
MONTE-CARLO CALCULATION OF NOISE AND SMALL-SIGNAL IMPEDANCE SPECTRA IN SUBMICROMETER GAAS N(+)NN(+) DIODES
Authors: STARIKOV E SHIKTOROV P GRUZINSKIS V VARANI L VAISSIERE JC NOUGIER JP REGGIANI L
Citation: E. Starikov et al., MONTE-CARLO CALCULATION OF NOISE AND SMALL-SIGNAL IMPEDANCE SPECTRA IN SUBMICROMETER GAAS N(+)NN(+) DIODES, Journal of applied physics, 79(1), 1996, pp. 242-252
A MODEL HYPER-FREQUENCY DIFFERENTIAL-MOBILITY FOR NONLINEAR TRANSPORTIN SEMICONDUCTORS
Authors: VARANI L VAISSIERE JC NOUGIER JP HOULET P REGGIANI L STARIKOV E SHIKTOROV P GRUZHINSKIS V HLOU L
Citation: L. Varani et al., A MODEL HYPER-FREQUENCY DIFFERENTIAL-MOBILITY FOR NONLINEAR TRANSPORTIN SEMICONDUCTORS, Journal of applied physics, 77(2), 1995, pp. 665-675
ELECTRONIC NOISE OF SUBMICRON N(-OSCILLATORY MACROSCOPIC BEHAVIORS()NN(+) DIODES UNDER NEAR)
Authors: STARIKOV E SHIKTOROV P GRUZINSKIS V NOUGIER JP VAISSIERE JC VARANI L REGGIANI L
Citation: E. Starikov et al., ELECTRONIC NOISE OF SUBMICRON N(-OSCILLATORY MACROSCOPIC BEHAVIORS()NN(+) DIODES UNDER NEAR), Applied physics letters, 66(18), 1995, pp. 2361-2363
HOT-CARRIER FLUCTUATIONS FROM BALLISTIC TO DIFFUSIVE REGIME IN SUBMICRON SEMICONDUCTOR STRUCTURES
Authors: VARANI L REGGIANI L HOULET P VAISSIERE JC NOUGIER JP KUHN T GONZALEZ T PARDO D
Citation: L. Varani et al., HOT-CARRIER FLUCTUATIONS FROM BALLISTIC TO DIFFUSIVE REGIME IN SUBMICRON SEMICONDUCTOR STRUCTURES, Semiconductor science and technology, 9(5), 1994, pp. 584-587
SMALL-SIGNAL ANALYSIS OF THE BOLTZMANN-EQUATION FROM HARMONIC-RESPONSE AND IMPULSE-RESPONSE METHODS
Authors: VAISSIERE JC NOUGIER JP VARANI L HOULET P HLOU L STARIKOV E SHIKTOROV P REGGIANI L
Citation: Jc. Vaissiere et al., SMALL-SIGNAL ANALYSIS OF THE BOLTZMANN-EQUATION FROM HARMONIC-RESPONSE AND IMPULSE-RESPONSE METHODS, Physical review. B, Condensed matter, 49(16), 1994, pp. 11144-11152
FLUCTUATIONS AND NOISE OF HOT CARRIERS IN SEMICONDUCTOR-MATERIALS ANDDEVICES
Authors: NOUGIER JP
Citation: Jp. Nougier, FLUCTUATIONS AND NOISE OF HOT CARRIERS IN SEMICONDUCTOR-MATERIALS ANDDEVICES, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2034-2049
TRANSIENT REGIME OF HOT CARRIERS IN INP
Authors: VAISSIERE JC ELKSSIMI M NOUGIER JP
Citation: Jc. Vaissiere et al., TRANSIENT REGIME OF HOT CARRIERS IN INP, Semiconductor science and technology, 7(3B), 1992, pp. 308-311
FAST COMPUTATION OF TRANSPORT-COEFFICIENTS OF HOT CARRIERS
Authors: NOUGIER JP TABIKH S VAISSIERE JC
Citation: Jp. Nougier et al., FAST COMPUTATION OF TRANSPORT-COEFFICIENTS OF HOT CARRIERS, Semiconductor science and technology, 7(3B), 1992, pp. 351-353
MONTE-CARLO ANALYSIS OF FLUCTUATIONS IN SUBMICRON N+NN+ STRUCTURES
Authors: VARANI L KUHN T REGGIANI L PERLES Y VAISSIERE JC NOUGIER JP
Citation: L. Varani et al., MONTE-CARLO ANALYSIS OF FLUCTUATIONS IN SUBMICRON N+NN+ STRUCTURES, Semiconductor science and technology, 7(3B), 1992, pp. 552-554
Risultati: 1-15 |