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Authors:
Coulthard, I
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Naftel, SJ
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Freeland, JW
Citation: I. Coulthard et al., Threshold behavior of the Cu L3M4,5M4,5 Auger effect of Cu metal at the L-3 edge - art. no. 115101, PHYS REV B, 6411(11), 2001, pp. 5101
Citation: P. Zhang et al., Multichannel detection x-ray absorption near edge structures study on the structural characteristics of dendrimer-stabilized CdS quantum dots, J APPL PHYS, 90(6), 2001, pp. 2755-2759
Authors:
Sun, XH
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Zhang, YF
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Citation: Xh. Sun et al., X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L-3,L-2 edge, J APPL PHYS, 90(12), 2001, pp. 6379-6383
Authors:
Naftel, SJ
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Kim, PS
Sham, TK
Coulthard, I
Antel, WJ
Freeland, JW
Frigo, SP
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Lee, ST
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Citation: Sj. Naftel et al., Soft x-ray-excited luminescence and optical x-ray absorption fine structures of tris (8-hydroxyquinoline) aluminum, APPL PHYS L, 78(13), 2001, pp. 1847-1849
Authors:
Coulthard, I
Sammynaiken, R
Naftel, SJ
Zhang, P
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Citation: I. Coulthard et al., Porous silicon: A template for the preparation of nanophase metals and bimetallic aggregates, PHYS ST S-A, 182(1), 2000, pp. 157-162
Citation: Sj. Naftel et al., The role of oxygen in the photoluminescence of porous silicon: Some recentobservations, PHYS ST S-A, 182(1), 2000, pp. 373-378
Authors:
Coulthard, I
Antel, WJ
Freeland, JW
Sham, TK
Naftel, SJ
Zhang, P
Citation: I. Coulthard et al., Influence of sample oxidation on the nature of optical luminescence from porous silicon, APPL PHYS L, 77(4), 2000, pp. 498-500
Citation: Sj. Naftel et al., Study of the electronic structure of Au-V bimetallics using X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge structure (XANES), J ALLOY COM, 283(1-2), 1999, pp. 5-11
Authors:
Naftel, SJ
Coulthard, I
Sham, TK
Xu, DX
Erickson, L
Das, SR
Citation: Sj. Naftel et al., Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L-3,L-2edge, APPL PHYS L, 74(19), 1999, pp. 2893-2895