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Results: 1-10 |
Results: 10
Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heating
Authors: Wu, HZ McCann, PJ Alkhouli, O Fang, XM McAlister, D Namjou, K Dai, N Chung, SJ Rappl, PHO
Citation: Hz. Wu et al., Molecular beam epitaxial growth of IV-VI multiple quantum well structures on Si(111) and BaF2(111) and optical studies of epilayer heating, J VAC SCI B, 19(4), 2001, pp. 1447-1454
Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors
Authors: Bhattacharya, P Krishna, S Phillips, J McCann, PJ Namjou, K
Citation: P. Bhattacharya et al., Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors, J CRYST GR, 227, 2001, pp. 27-35
Midinfrared photoluminescence from IV-VI semiconductors grown on silicon
Authors: McAlister, DW McCann, PJ Namjou, K Fang, XM Alkhouli, O Wu, HZ
Citation: Dw. Mcalister et al., Midinfrared photoluminescence from IV-VI semiconductors grown on silicon, J APPL PHYS, 89(6), 2001, pp. 3514-3516
Intersubband gain and stimulated emission in long-wavelength (lambda=13 mum) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices
Authors: Krishna, S Bhattacharya, P Singh, J Norris, T Urayama, J McCann, PJ Namjou, K
Citation: S. Krishna et al., Intersubband gain and stimulated emission in long-wavelength (lambda=13 mum) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices, IEEE J Q EL, 37(8), 2001, pp. 1066-1074
Reply to Comment on 'Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser
Authors: Krishna, S Bhattacharya, P McCann, PJ Namjou, K
Citation: S. Krishna et al., Reply to Comment on 'Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser, ELECTR LETT, 37(2), 2001, pp. 97-98
Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices
Authors: Fang, XM Namjou, K Chao, IN McCann, PJ Dai, N Tor, G
Citation: Xm. Fang et al., Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices, J VAC SCI B, 18(3), 2000, pp. 1720-1723
Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser
Authors: Krishna, S Bhattacharya, P McCann, PJ Namjou, K
Citation: S. Krishna et al., Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser, ELECTR LETT, 36(18), 2000, pp. 1550-1551
Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
Authors: Krishna, S Qasaimeh, O Bhattacharya, P McCann, PJ Namjou, K
Citation: S. Krishna et al., Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser, APPL PHYS L, 76(23), 2000, pp. 3355-3357
IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods
Authors: McCann, PJ Chao, IN Sachar, H McAlister, D Li, CP Fang, XM Wu, HZ Namjou, K
Citation: Pj. Mccann et al., IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods, SPECT ACT A, 55(10), 1999, pp. 1999-2005
Above-room-temperature continuous-wave mid-infrared photoluminescence fromPbSe/PbSrSe quantum wells
Authors: McCann, PJ Namjou, K Fang, XM
Citation: Pj. Mccann et al., Above-room-temperature continuous-wave mid-infrared photoluminescence fromPbSe/PbSrSe quantum wells, APPL PHYS L, 75(23), 1999, pp. 3608-3610
Risultati: 1-10 |