AAAAAA
Results:
1-13
|
Results: 13
Authors:
Hesse, KF
Czank, M
Nemcsics, A
Citation: Kf. Hesse et al., Crystal structure of cadmium germanium selenide, Cd4GeSe6, Z KRIST-NEW, 216(1), 2001, pp. 39-40
Authors:
Nemcsics, A
Riesz, F
Citation: A. Nemcsics et F. Riesz, Influence of lattice mismatch and growth rate on the decay of RHEED oscillation in the case of InGaAs/GaAs growth, CRYST RES T, 36(8-10), 2001, pp. 1011-1017
Authors:
Horvath, ZJ
Dozsa, L
Van Tuyen, V
Podor, B
Nemcsics, A
Frigeri, P
Gombia, E
Mosca, R
Franchi, S
Citation: Zj. Horvath et al., Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures, THIN SOL FI, 367(1-2), 2000, pp. 89-92
Authors:
Nemcsics, A
Citation: A. Nemcsics, Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained InxGa1-xAs/GaAs structures, THIN SOL FI, 367(1-2), 2000, pp. 302-305
Authors:
Nemcsics, A
Riesz, F
Szabo, J
Horvath, ZE
Gurban, S
Citation: A. Nemcsics et al., Makyoh topography study of the curvature and surface morphology of mismatched InGaAs/GaAs heterostructures, PHYS ST S-A, 177(1), 2000, pp. 231-236
Authors:
Nemcsics, A
Citation: A. Nemcsics, The initial phase shift phenomenon of RHEED oscillations, J CRYST GR, 217(3), 2000, pp. 223-227
Authors:
Nemcsics, A
Dobos, L
David, L
Citation: A. Nemcsics et al., Study of polish material removal by electrochemical method on different compound semiconductors, INORG MATER, 36(10), 2000, pp. 969-974
Authors:
Nemcsics, A
Citation: A. Nemcsics, Experimental determination of the valence band structure of the InxGa1-xAs(001) surface, INORG MATER, 36(10), 2000, pp. 979-990
Authors:
Nemcsics, A
Riesz, F
Dobos, L
Citation: A. Nemcsics et al., Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systems, THIN SOL FI, 344, 1999, pp. 520-523
Authors:
Kinder, R
Nemcsics, A
Harman, R
Riesz, F
Pecz, B
Citation: R. Kinder et al., Carrier profiling of a heterojunction bipolar transistor and p-i-n photodiode structures by electrochemical C-V technique, PHYS ST S-A, 175(2), 1999, pp. 631-636
Authors:
Nemcsics, A
Citation: A. Nemcsics, Contribution to the impedance analysis of GaAs-electrolyte junctions, PHYS ST S-A, 173(2), 1999, pp. 405-415
Authors:
Nemcsics, A
Riesz, F
Dobos, L
Citation: A. Nemcsics et al., Selective electrochemical profiting of threading dislocations in mismatched InGaAs/GaAs heteroepitaxial systems, PHYS ST S-A, 171(1), 1999, pp. 283-288
Authors:
Nemcsics, A
Mojzes, I
Dobos, L
Citation: A. Nemcsics et al., Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal, MICROEL REL, 39(10), 1999, pp. 1505-1509
Risultati:
1-13
|