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Results: 1-9 |
Results: 9
Transport of hollow atoms through thin dielectric films
Authors: Schenkel, T Hamza, AV Newman, MW Machicoane, G McDonald, JW Schneider, DH Wu, KJ Liechtenstein, VK
Citation: T. Schenkel et al., Transport of hollow atoms through thin dielectric films, PHYS SCR, T92, 2001, pp. 208-210
Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)
Authors: Hamza, AV Newman, MW Thielen, PA Lee, HWH Schenkel, T McDonald, JW Schneider, DH
Citation: Av. Hamza et al., Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100), APPL PHYS L, 79(18), 2001, pp. 2973-2975
Hydrogenated carbon clusters produced by highly charged ion impact on solid C-84
Authors: Schlatholter, T Newman, MW Niedermayr, TR Machicoane, GA McDonald, JW Schenkel, T Hoekstra, R Hamza, AV
Citation: T. Schlatholter et al., Hydrogenated carbon clusters produced by highly charged ion impact on solid C-84, EUR PHY J D, 12(2), 2000, pp. 323-327
Electronic sputtering of solids by slow, highly charged ions: Fundamentalsand applications
Authors: Schenkel, T Newman, MW Niedermayr, TR Machicoane, GA McDonald, JW Barnes, AV Hamza, AV Banks, JC Doyle, BL Wu, KJ
Citation: T. Schenkel et al., Electronic sputtering of solids by slow, highly charged ions: Fundamentalsand applications, NUCL INST B, 161, 2000, pp. 65-75
Influence of hydrogen on the stability of positively charged silicon dioxide clusters
Authors: Schenkel, T Schlatholter, T Newman, MW Machicoane, GA McDonald, JW Hamza, AV
Citation: T. Schenkel et al., Influence of hydrogen on the stability of positively charged silicon dioxide clusters, J CHEM PHYS, 113(6), 2000, pp. 2419-2422
Surface analysis by highly charged ion based secondary ion mass spectrometry
Authors: Schenkel, T Hamza, AV Barnes, AV Newman, MW Machicoane, G Niedermayer, T Hattass, M McDonald, JW Schneider, DH Wu, KJ Odom, RW
Citation: T. Schenkel et al., Surface analysis by highly charged ion based secondary ion mass spectrometry, PHYS SCR, T80A, 1999, pp. 73-75
Deposition of potential energy in solids by slow, highly charged ions
Authors: Schenkel, T Barnes, AV Niedermayr, TR Hattass, M Newman, MW Machicoane, GA McDonald, JW Hamza, AV Schneider, DH
Citation: T. Schenkel et al., Deposition of potential energy in solids by slow, highly charged ions, PHYS REV L, 83(21), 1999, pp. 4273-4276
Charge equilibration time of slow, highly charged ions in solids
Authors: Hattass, M Schenkel, T Hamza, AV Barnes, AV Newman, MW McDonald, JW Niedermayr, TR Machicoane, GA Schneider, DH
Citation: M. Hattass et al., Charge equilibration time of slow, highly charged ions in solids, PHYS REV L, 82(24), 1999, pp. 4795-4798
Electronic desorption of alkyl monolayers from silicon by very highly charged ions
Authors: Schenkel, T Schneider, M Hattass, M Newman, MW Barnes, AV Hamza, AV Schneider, DH Cicero, RL Chidsey, CED
Citation: T. Schenkel et al., Electronic desorption of alkyl monolayers from silicon by very highly charged ions, J VAC SCI B, 16(6), 1998, pp. 3298-3300
Risultati: 1-9 |