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Results:
1-8
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Results: 8
Authors:
Wondrak, W
Held, R
Niemann, E
Schmid, U
Citation: W. Wondrak et al., SiC devices for advanced power and high-temperature applications, IEEE IND E, 48(2), 2001, pp. 307-308
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Niemann, E
Citation: U. Schmid et al., Electrical characterization of 6H-SiC enhancement-mode MOSFETs at high temperatures, MAT SCI E B, 61-2, 1999, pp. 493-496
Authors:
Wischmeyer, F
Wondrak, W
Leidich, D
Niemann, E
Citation: F. Wischmeyer et al., CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure, MAT SCI E B, 61-2, 1999, pp. 563-566
Authors:
Ziermann, R
von Berg, J
Obermeier, E
Wischmeyer, F
Niemann, E
Moller, H
Eickhoff, M
Krotz, G
Citation: R. Ziermann et al., High temperature piezoresistive beta-SiC-on-SOI pressure sensor with on chip SiC thermistor, MAT SCI E B, 61-2, 1999, pp. 576-578
Authors:
Kaindl, W
Lades, M
Kaminski, N
Niemann, E
Wachutka, G
Citation: W. Kaindl et al., Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC, J ELEC MAT, 28(3), 1999, pp. 154-160
Authors:
Wischmeyer, F
Niemann, E
Hartnagel, HL
Citation: F. Wischmeyer et al., Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor, J ELEC MAT, 28(3), 1999, pp. 175-179
Authors:
Lades, M
Kaindl, W
Kaminski, N
Niemann, E
Wachutka, G
Citation: M. Lades et al., Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices, IEEE DEVICE, 46(3), 1999, pp. 598-604
Authors:
Wirth, H
Panknin, D
Skorupa, W
Niemann, E
Citation: H. Wirth et al., Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation, APPL PHYS L, 74(7), 1999, pp. 979-981
Risultati:
1-8
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