Authors:
Nijdam, AJ
Gardeniers, JGE
Berenschot, JW
van Veenendaal, E
van Suchtelen, J
Elwenspoek, M
Citation: Aj. Nijdam et al., Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon, J MICROM M, 11(5), 2001, pp. 499-503
Authors:
van Veenendaal, E
Sato, K
Shikida, M
Nijdam, AJ
van Suchtelen, J
Citation: E. Van Veenendaal et al., Micro-morphology of single crystalline silicon surfaces during anisotropicwet chemical etching in KOH: velocity source forests, SENS ACTU-A, 93(3), 2001, pp. 232-242
Authors:
Nijdam, AJ
van Veenendaal, E
Cuppen, HM
van Suchtelen, J
Reed, ML
Gardeniers, JGE
van Enckevort, WJP
Vlieg, E
Elwenspoek, M
Citation: Aj. Nijdam et al., Formation and stabilization of pyramidal etch hillocks on silicon {100} inanisotropic etchants: Experiments and Monte Carlo simulation, J APPL PHYS, 89(7), 2001, pp. 4113-4123
Authors:
van Veenendaal, E
van Suchtelen, J
van Enckevort, WJP
Sato, K
Nijdam, AJ
Gardeniers, JGE
Elwenspoek, M
Citation: E. Van Veenendaal et al., The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide, J APPL PHYS, 87(12), 2000, pp. 8732-8740
Authors:
Nijdam, AJ
van Veenendaal, E
Gardeniers, JGE
Kentgens, APM
Nachtegaal, GH
Elwenspoek, M
Citation: Aj. Nijdam et al., Si-29-nuclear magnetic resonance on the etching products of silicon in potassium hydroxide solutions, J ELCHEM SO, 147(6), 2000, pp. 2195-2198
Authors:
Nijdam, AJ
Berenschot, JW
van Suchtelen, J
Gardeniers, JGE
Elwenspoek, M
Citation: Aj. Nijdam et al., Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates, J MICROM M, 9(2), 1999, pp. 135-138