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Results: 1-14 |
Results: 14
Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313
Authors: Prokofyeva, T Seon, M Vanbuskirk, J Holtz, M Nikishin, SA Faleev, NN Temkin, H Zollner, S
Citation: T. Prokofyeva et al., Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313, PHYS REV B, 6312(12), 2001, pp. 5313
Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN
Authors: Holtz, M Prokofyeva, T Seon, M Copeland, K Vanbuskirk, J Williams, S Nikishin, SA Tretyakov, V Temkin, H
Citation: M. Holtz et al., Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN, J APPL PHYS, 89(12), 2001, pp. 7977-7982
High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H
Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406
Structural and compositional variations in ZnSnP2/GaAs superlattices
Authors: Lita, B Beck, M Goldman, RS Seryogin, GA Nikishin, SA Temkin, H
Citation: B. Lita et al., Structural and compositional variations in ZnSnP2/GaAs superlattices, APPL PHYS L, 77(18), 2000, pp. 2894-2896
Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
Authors: Nikishin, SA Faleev, NN Zubrilov, AS Antipov, VG Temkin, H
Citation: Sa. Nikishin et al., Growth of AlGaN on Si(111) by gas source molecular beam epitaxy, APPL PHYS L, 76(21), 2000, pp. 3028-3030
Quantitative determination of the order parameter in epitaxial layers of ZnSnP2
Authors: Francoeur, S Seryogin, GA Nikishin, SA Temkin, H
Citation: S. Francoeur et al., Quantitative determination of the order parameter in epitaxial layers of ZnSnP2, APPL PHYS L, 76(15), 2000, pp. 2017-2019
Selective growth of high quality GaN on Si(111) substrates
Authors: Seon, M Prokofyeva, T Holtz, M Nikishin, SA Faleev, NN Temkin, H
Citation: M. Seon et al., Selective growth of high quality GaN on Si(111) substrates, APPL PHYS L, 76(14), 2000, pp. 1842-1844
Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2
Authors: Mintairov, AM Sadchikov, NA Sauncy, T Holtz, M Seryogin, GA Nikishin, SA Temkin, H
Citation: Am. Mintairov et al., Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2, PHYS REV B, 59(23), 1999, pp. 15197-15207
High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
Authors: Nikishin, SA Antipov, VG Francoeur, S Faleev, NN Seryogin, GA Elyukhin, VA Temkin, H Prokofyeva, TI Holtz, M Konkar, A Zollner, S
Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486
High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S Grave de Peralta, L Seryogin, GA Temkin, H Prokofyeva, TI Holtz, M Chu, SNG
Citation: Sa. Nikishin et al., High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, APPL PHYS L, 75(14), 1999, pp. 2073-2075
Excitons bound to nitrogen clusters in GaAsN
Authors: Francoeur, S Nikishin, SA Jin, C Qiu, Y Temkin, H
Citation: S. Francoeur et al., Excitons bound to nitrogen clusters in GaAsN, APPL PHYS L, 75(11), 1999, pp. 1538-1540
X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs
Authors: Francoeur, S Seryogin, GA Nikishin, SA Temkin, H
Citation: S. Francoeur et al., X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs, APPL PHYS L, 74(24), 1999, pp. 3678-3680
Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN
Authors: Jin, C Qiu, Y Nikishin, SA Temkin, H
Citation: C. Jin et al., Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN, APPL PHYS L, 74(23), 1999, pp. 3516-3518
Order-disorder transition in epitaxial ZnSnP2
Authors: Seryogin, GA Nikishin, SA Temkin, H Mintairov, AM Merz, JL Holtz, M
Citation: Ga. Seryogin et al., Order-disorder transition in epitaxial ZnSnP2, APPL PHYS L, 74(15), 1999, pp. 2128-2130
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