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Results: 1-12 |
Results: 12
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy, SOL ST ELEC, 45(2), 2001, pp. 249-253
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Nikolaev, AE Nikitina, IP Dmitriev, VA
Citation: Ay. Polyakov et al., Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates, SOL ST ELEC, 45(2), 2001, pp. 261-265
Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC
Authors: Danielsson, E Zetterling, CM Ostling, M Nikolaev, A Nikitina, IP Dmitriev, V
Citation: E. Danielsson et al., Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC, IEEE DEVICE, 48(3), 2001, pp. 444-449
Fermi level dependence of hydrogen diffusivity in GaN
Authors: Polyakov, AY Smirnov, NB Pearton, SJ Ren, F Theys, B Jomard, F Teukam, Z Dmitriev, VA Nikolaev, AE Usikov, AS Nikitina, IP
Citation: Ay. Polyakov et al., Fermi level dependence of hydrogen diffusivity in GaN, APPL PHYS L, 79(12), 2001, pp. 1834-1836
GaN 20-mm diameter ingots grown from melt-solution by seeded technique
Authors: Sukhoveyev, VA Ivantsov, VA Nikitina, IP Babanin, AI Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Dmitriev, VA
Citation: Va. Sukhoveyev et al., GaN 20-mm diameter ingots grown from melt-solution by seeded technique, MRS I J N S, 5, 2000, pp. NIL_376-NIL_381
High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H
Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
Authors: Polyakov, AY Govorkov, AV Smirnov, NB Theys, B Jomard, F Nikitina, IP Nikolaev, AE Dmitriev, VA
Citation: Ay. Polyakov et al., Misfit dislocations at the GaN/SiC interface and their interaction with point defects, SOL ST ELEC, 44(11), 2000, pp. 1955-1960
Effect of likvodek on micromycetes contaminating library collections
Authors: Medvedeva, NG Elinov, NP Borisova, OG Nikitina, IP Kuzikova, IL
Citation: Ng. Medvedeva et al., Effect of likvodek on micromycetes contaminating library collections, MIKOL FITOP, 34(2), 2000, pp. 53-58
GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
Authors: Vasil'ev, VI Akhmedov, D Geryagin, AG Kuchinskii, VI Nikitina, IP Smirnov, VM Tret'yakov, DN
Citation: Vi. Vasil'Ev et al., GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts, SEMICONDUCT, 33(9), 1999, pp. 1034-1036
Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
Authors: Vasilevskii, KV Rendakova, SV Nikitina, IP Babanin, AI Andreev, AN Zekentes, K
Citation: Kv. Vasilevskii et al., Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers, SEMICONDUCT, 33(11), 1999, pp. 1206-1211
Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area
Authors: Vasil'ev, VI Nikitina, IP Smirnov, VM Tret'yakov, DN
Citation: Vi. Vasil'Ev et al., Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area, MAT SCI E B, 66(1-3), 1999, pp. 67-69
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
Authors: Albrecht, M Nikitina, IP Nikolaev, AE Melnik, YV Dmitriev, VA Strunk, HP
Citation: M. Albrecht et al., Dislocation reduction in AlN and GaN bulk crystals grown by HVPE, PHYS ST S-A, 176(1), 1999, pp. 453-458
Risultati: 1-12 |