Authors:
Nilsson, HE
Bellotti, E
Hjelm, M
Brennan, K
Citation: He. Nilsson et al., A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC, MATH COMP S, 55(1-3), 2001, pp. 199-208
Authors:
Bertilsson, K
Dubaric, E
Thungstrom, G
Nilsson, HE
Petersson, CS
Citation: K. Bertilsson et al., Simulation of a low atmospheric-noise modified four-quadrant position sensitive detector, NUCL INST A, 466(1), 2001, pp. 183-187
Authors:
Bertilsson, K
Nilsson, HE
Hjelm, M
Petersson, CS
Kackell, P
Persson, C
Citation: K. Bertilsson et al., The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs, SOL ST ELEC, 45(5), 2001, pp. 645-653
Citation: C. Thaning et He. Nilsson, A narrow range of wavelengths active in regulating apothecial development in Sclerotinia sclerotiorum, J PHYTOPATH, 148(11-12), 2000, pp. 627-631
Authors:
Ruden, PP
Bellotti, E
Nilsson, HE
Brennan, KF
Citation: Pp. Ruden et al., Modeling of band-to-band tunneling transitions during drift in Monte Carlotransport simulations, J APPL PHYS, 88(3), 2000, pp. 1488-1493
Authors:
Brennan, KF
Bellotti, E
Farahmand, M
Nilsson, HE
Ruden, PP
Zhang, YM
Citation: Kf. Brennan et al., Monte Carlo simulation of noncubic symmetry semiconducting materials and devices, IEEE DEVICE, 47(10), 2000, pp. 1882-1890
Authors:
Hjelm, M
Nilsson, HE
Kackell, P
Persson, C
Sannemo, U
Petersson, CS
Citation: M. Hjelm et al., A study of the anisotropic electron transport in 4H and 6H silicon carbideby Monte Carlo simulation, PHYS SCR, T79, 1999, pp. 42-45
Citation: He. Nilsson et M. Hjelm, Monte Carlo simulation of electron transport in 2H-SiC using a three valley analytical conduction band model, J APPL PHYS, 86(11), 1999, pp. 6230-6233