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Results:
1-15
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Results: 15
Authors:
Bertilsson, K
Dubaric, E
Nilsson, HE
Hjelm, M
Petersson, CS
Citation: K. Bertilsson et al., Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC, DIAM RELAT, 10(3-7), 2001, pp. 1283-1286
Authors:
Nilsson, HE
Bellotti, E
Hjelm, M
Brennan, K
Citation: He. Nilsson et al., A comparison between different Monte Carlo models in simulation of hole transport in 4H-SiC, MATH COMP S, 55(1-3), 2001, pp. 199-208
Authors:
Dubaric, E
Frojdh, C
Nilsson, HE
Petersson, CS
Citation: E. Dubaric et al., Resolution and noise properties of scintillator coated X-ray detectors, NUCL INST A, 466(1), 2001, pp. 178-182
Authors:
Bertilsson, K
Dubaric, E
Thungstrom, G
Nilsson, HE
Petersson, CS
Citation: K. Bertilsson et al., Simulation of a low atmospheric-noise modified four-quadrant position sensitive detector, NUCL INST A, 466(1), 2001, pp. 183-187
Authors:
Bertilsson, K
Nilsson, HE
Hjelm, M
Petersson, CS
Kackell, P
Persson, C
Citation: K. Bertilsson et al., The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs, SOL ST ELEC, 45(5), 2001, pp. 645-653
Authors:
Nilsson, HE
Martinez, A
Ghillino, E
Sannemo, U
Bellotti, E
Goano, M
Citation: He. Nilsson et al., Numerical modeling of hole interband tunneling in wurtzite GaN and SiC, J APPL PHYS, 90(6), 2001, pp. 2847-2852
Authors:
Thaning, C
Nilsson, HE
Citation: C. Thaning et He. Nilsson, A narrow range of wavelengths active in regulating apothecial development in Sclerotinia sclerotiorum, J PHYTOPATH, 148(11-12), 2000, pp. 627-631
Authors:
Ruden, PP
Bellotti, E
Nilsson, HE
Brennan, KF
Citation: Pp. Ruden et al., Modeling of band-to-band tunneling transitions during drift in Monte Carlotransport simulations, J APPL PHYS, 88(3), 2000, pp. 1488-1493
Authors:
Bellotti, E
Nilsson, HE
Brennan, KF
Ruden, PP
Trew, R
Citation: E. Bellotti et al., Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC, J APPL PHYS, 87(8), 2000, pp. 3864-3871
Authors:
Brennan, KF
Bellotti, E
Farahmand, M
Nilsson, HE
Ruden, PP
Zhang, YM
Citation: Kf. Brennan et al., Monte Carlo simulation of noncubic symmetry semiconducting materials and devices, IEEE DEVICE, 47(10), 2000, pp. 1882-1890
Authors:
Hjelm, M
Nilsson, HE
Kackell, P
Persson, C
Sannemo, U
Petersson, CS
Citation: M. Hjelm et al., A study of the anisotropic electron transport in 4H and 6H silicon carbideby Monte Carlo simulation, PHYS SCR, T79, 1999, pp. 42-45
Authors:
Frojdh, C
Thungstrom, G
Nilsson, HE
Petersson, CS
Citation: C. Frojdh et al., Schottky barriers on 6H-SiC, PHYS SCR, T79, 1999, pp. 297-302
Authors:
Nilsson, HE
Hjelm, M
Frojdh, C
Persson, C
Sannemo, U
Petersson, CS
Citation: He. Nilsson et al., Full band Monte Carlo simulation of electron transport in 6H-SiC, J APPL PHYS, 86(2), 1999, pp. 965-973
Authors:
Nilsson, HE
Hjelm, M
Citation: He. Nilsson et M. Hjelm, Monte Carlo simulation of electron transport in 2H-SiC using a three valley analytical conduction band model, J APPL PHYS, 86(11), 1999, pp. 6230-6233
Authors:
Bellotti, E
Nilsson, HE
Brennan, KF
Ruden, PP
Citation: E. Bellotti et al., Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC, J APPL PHYS, 85(6), 1999, pp. 3211-3217
Risultati:
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