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Results: 1-17 |
Results: 17
Revised charge redistribution on semiconductor III-V (110) surfaces
Authors: Mankefors, S Nilsson, PO
Citation: S. Mankefors et Po. Nilsson, Revised charge redistribution on semiconductor III-V (110) surfaces, J PHYS-COND, 13(5), 2001, pp. 823-832
The design of the material science beamline, I811, at MAX-II
Authors: Grehk, TM Nilsson, PO
Citation: Tm. Grehk et Po. Nilsson, The design of the material science beamline, I811, at MAX-II, NUCL INST A, 467, 2001, pp. 635-638
Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
Authors: Nilsson, PO Mankefors, S Guo, J Nordgren, J Debowska-Nilsson, D Ni, WX Hansson, GV
Citation: Po. Nilsson et al., Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306, PHYS REV B, 6411(11), 2001, pp. 5306
Three-dimensional band mapping by angle-dependent very-low-energy electrondiffraction and photoemission: Methodology and application to Cu - art. no. 205108
Authors: Strocov, VN Claessen, R Nicolay, G Hufner, S Kimura, A Harasawa, A Shin, S Kakizaki, A Starnberg, HI Nilsson, PO Blaha, P
Citation: Vn. Strocov et al., Three-dimensional band mapping by angle-dependent very-low-energy electrondiffraction and photoemission: Methodology and application to Cu - art. no. 205108, PHYS REV B, 6320(20), 2001, pp. 5108
Resonant scattering in delta-doped heterostructures
Authors: Robinson, IK Nilsson, PO Debowska-Nilsson, D Ni, WX Hansson, GV
Citation: Ik. Robinson et al., Resonant scattering in delta-doped heterostructures, APPL PHYS L, 79(18), 2001, pp. 2913-2915
Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs
Authors: Mankefors, S Nilsson, PO Kanski, J Andersson, T Karlsson, K Agui, A Sathe, C Guo, JH Nordgren, J
Citation: S. Mankefors et al., Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs, PHYS REV B, 61(8), 2000, pp. 5540-5545
Interaction between As and InP(110) studied by photoemission
Authors: Oscarsson, H He, ZQ Ilver, L Kanski, J Mankefors, S Nilsson, PO Karlsson, UO
Citation: H. Oscarsson et al., Interaction between As and InP(110) studied by photoemission, PHYS REV B, 61(3), 2000, pp. 2065-2072
Local ionicity - an alternative definition for ab initio calculations
Authors: Mankefors, S Nilsson, PO
Citation: S. Mankefors et Po. Nilsson, Local ionicity - an alternative definition for ab initio calculations, J PHYS-COND, 12(11), 2000, pp. 2429-2437
Direct observation of interface effects of thin AlAs(100) layers buried inGaAs
Authors: Agui, A Sathe, C Guo, JH Nordgren, J Mankefors, S Nilsson, PO Kanski, J Andersson, TG Karlsson, K
Citation: A. Agui et al., Direct observation of interface effects of thin AlAs(100) layers buried inGaAs, APPL SURF S, 166(1-4), 2000, pp. 309-312
Special issue: Proceedings of the Seventh International Conference on the Formation of Semiconductor Interfaces, Goteborg, Sweden, June 21-25, 1999 -Preface
Authors: Kanski, J Nilsson, PO
Citation: J. Kanski et Po. Nilsson, Special issue: Proceedings of the Seventh International Conference on the Formation of Semiconductor Interfaces, Goteborg, Sweden, June 21-25, 1999 -Preface, APPL SURF S, 166(1-4), 2000, pp. XIII-XIII
An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment
Authors: Nilsson, PO Mankefors, S Lundgren, E
Citation: Po. Nilsson et al., An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment, J ALLOY COM, 286(1-2), 1999, pp. 31-36
Very-low-energy electron diffraction as a direct probe for unoccupied bandstructure: principles, results, implications in photoemission
Authors: Strocov, VN Starnberg, HI Nilsson, PO
Citation: Vn. Strocov et al., Very-low-energy electron diffraction as a direct probe for unoccupied bandstructure: principles, results, implications in photoemission, APPL SURF S, 142(1-4), 1999, pp. 311-315
Ab initio calculations of the geometry and electronic structure of hydrogenated As/Ge(100)
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Ab initio calculations of the geometry and electronic structure of hydrogenated As/Ge(100), PHYS REV B, 60(3), 1999, pp. 1933-1938
Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis
Authors: Strocov, VN Mankefors, S Nilsson, PO Kanski, J Ilver, L Starnberg, HI
Citation: Vn. Strocov et al., Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis, PHYS REV B, 59(8), 1999, pp. R5296-R5299
Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III-V ((1)over-bar(1)over-bar(1)over-bar) surfaces
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III-V ((1)over-bar(1)over-bar(1)over-bar) surfaces, SURF SCI, 443(3), 1999, pp. L1049-L1054
Hydrogenation of As/Ge(100) 2 x 1: a theoretical study of the surface electronic structure
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Hydrogenation of As/Ge(100) 2 x 1: a theoretical study of the surface electronic structure, SURF SCI, 435, 1999, pp. 342-346
Absolute determination of band structure E(k) by combined very-low-energy electron diffraction and photoemission
Authors: Strocov, VN Starnberg, HI Nilsson, PO Claessen, R Hufner, S Themlin, JM
Citation: Vn. Strocov et al., Absolute determination of band structure E(k) by combined very-low-energy electron diffraction and photoemission, CZEC J PHYS, 49(11), 1999, pp. 1631-1638
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