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Results:
1-16
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Results: 16
Authors:
Nosho, BZ
Bennett, BR
Whitman, LJ
Goldenberg, M
Citation: Bz. Nosho et al., Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability, J VAC SCI B, 19(4), 2001, pp. 1626-1630
Authors:
Bracker, AS
Tischler, JG
Gammon, D
Nosho, BZ
Citation: As. Bracker et al., Spectroscopy and mechanical modification of single strain-induced quantum dots, PHYS ST S-B, 224(1), 2001, pp. 133-137
Authors:
Nosho, BZ
Shanabrook, BV
Bennett, BR
Barvosa-Carter, W
Weinberg, WH
Whitman, LJ
Citation: Bz. Nosho et al., Initial stages of Sb-2 deposition on InAs(001), SURF SCI, 478(1-2), 2001, pp. 1-8
Authors:
Zepeda-Ruiz, LA
Pelzel, RI
Nosho, BZ
Weinberg, WH
Maroudas, D
Citation: La. Zepeda-ruiz et al., Deformation behavior of coherently strained InAs/GaAs(111) A heteroepitaxial systems: Theoretical calculations and experimental measurements, J APPL PHYS, 90(6), 2001, pp. 2689-2698
Authors:
Magno, R
Bracker, AS
Bennett, BR
Nosho, BZ
Whitman, LJ
Citation: R. Magno et al., Barrier roughness effects in resonant interband tunnel diodes, J APPL PHYS, 90(12), 2001, pp. 6177-6181
Authors:
Bracker, AS
Nosho, BZ
Barvosa-Carter, W
Whitman, LJ
Bennett, BR
Shanabrook, BV
Culbertson, JC
Citation: As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
Authors:
Pelzel, RI
Nosho, BZ
Fimland, BO
Weinberg, WH
Citation: Ri. Pelzel et al., Adsorption of [(Bu-t)GaS](4) on the GaAs(001)-(4 x 2) surface, SURF SCI, 470(1-2), 2000, pp. L81-L87
Authors:
Nosho, BZ
Barvosa-Carter, W
Yang, MJ
Bennett, BR
Whitman, LJ
Citation: Bz. Nosho et al., Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures, SURF SCI, 465(3), 2000, pp. 361-371
Authors:
Barvosa-Carter, W
Bracker, AS
Culbertson, JC
Nosho, BZ
Shanabrook, BV
Whitman, LJ
Kim, H
Modine, NA
Kaxiras, E
Citation: W. Barvosa-carter et al., Structure of III-Sb(001) growth surfaces: The role of heterodimers, PHYS REV L, 84(20), 2000, pp. 4649-4652
Authors:
Pelzel, RI
Zepeda-Ruiz, LA
Nosho, BZ
Li, YL
Weinberg, WH
Maroudas, D
Citation: Ri. Pelzel et al., Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy, APPL PHYS L, 76(21), 2000, pp. 3017-3019
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bracker, AS
Magno, R
Bennett, BR
Culbertson, JC
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
Authors:
Zepeda-Ruiz, LA
Nosho, BZ
Pelzel, RI
Weinberg, WH
Maroudas, D
Citation: La. Zepeda-ruiz et al., Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 441(2-3), 1999, pp. L911-L916
Authors:
Pelzel, RI
Nosho, BZ
Fimland, BO
Weinberg, WH
Citation: Ri. Pelzel et al., Adsorption of [(Bu-t)GaS](4) on GaAs(001)-(2 x 4), SURF SCI, 426(2), 1999, pp. 163-172
Authors:
Nosho, BZ
Zepeda-Ruiz, LA
Pelzel, RI
Weinberg, WH
Maroudas, D
Citation: Bz. Nosho et al., Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations, APPL PHYS L, 75(6), 1999, pp. 829-831
Authors:
Pelzel, RI
Nosho, BZ
Shoenfeld, WV
Lundstrom, T
Petroff, PM
Weinberg, WH
Citation: Ri. Pelzel et al., Effect of initial surface reconstruction on the GaS/GaAs(001) interface, APPL PHYS L, 75(21), 1999, pp. 3354-3356
Authors:
Nosho, BZ
Weinberg, WH
Barvosa-Carter, W
Bennett, BR
Shanabrook, BV
Whitman, LJ
Citation: Bz. Nosho et al., Effects of surface reconstruction on III-V semiconductor interface formation: The role of III/V composition, APPL PHYS L, 74(12), 1999, pp. 1704-1706
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